Terahertz photoconductive antenna made of 1.5 MeV He~+-implanted GaAs substrates

YANG Kang1; 2 CHEN Xiliang1; 2 MA Mingwang1; 2 YANG Shumin1; 2 CAO Jianqing1 WANG Yongqi1 ZHU Zhiyong1 1

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Terahertz photoconductive antenna made of 1.5 MeV He~+-implanted GaAs substrates

更新时间：2021-03-05

- Terahertz photoconductive antenna made of 1.5 MeV He~+-implanted GaAs substrates
- NUCLEAR TECHNIQUES Vol. 33, Issue 7, (2010)
- 作者机构：
  
  1. 中国科学院上海应用物理研究所
  2. 中国科学院研究生院
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(10875161)资助
- DOI：
  CLC： TN826
- Published：01 July 2010
- 稿件说明：
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[1]杨康,陈西良,马明旺,杨树敏,曹建清,王永祺,朱智勇.1.5 MeV He~+离子注入SI-GaAs制备太赫兹光电导天线[J].核技术,2010,33(07):497-500.

YANG Kang1, 2 CHEN Xiliang1, 2 MA Mingwang1, et al. Terahertz photoconductive antenna made of 1.5 MeV He~+-implanted GaAs substrates[J]. Nuclear techniques, 2010, 33(7): 497-500.
[1]杨康,陈西良,马明旺,杨树敏,曹建清,王永祺,朱智勇.1.5 MeV He~+离子注入SI-GaAs制备太赫兹光电导天线[J].核技术,2010,33(07):497-500. DOI：

YANG Kang1, 2 CHEN Xiliang1, 2 MA Mingwang1, et al. Terahertz photoconductive antenna made of 1.5 MeV He~+-implanted GaAs substrates[J]. Nuclear techniques, 2010, 33(7): 497-500. DOI：

摘要

用1.5MeV He+离子注入半绝缘砷化镓晶体（SI-GaAs）

以其为基体制成光电导天线。太赫兹时域光谱测量显示

以离子注入晶体为基体的光电导天线

其时域信号强度是未注入晶体的3倍

略强于以LT-GaAs晶体为基体的光电导天线

但拥有比LT-GaAs晶体为基体的光电导天线略宽的频谱宽度和相当的信噪比。实验结果表明

用1.5MeV He+室温注入SI-GaAs制备太赫兹光电导天线的最佳注量约为1×1016ions·cm-2。

Abstract

In this work

performances of terahertz emitters made of semi-insulating GaAs(SI-GaAs) was improved by 1.5 MeV He+ ion implantation.The time-domain signal strength of the implanted SI-GaAs is about three times higher than that of the non-irradiated sample.The photoconductive antenna(PCA) on a substrate of He+-implanted SI-GaAs possesses slightly higher time-domain signal strength and slightly broader frequency range than those of the PCA on an LT-GaAs substrate

with similar signal-to-noise ratio.The best THz wave emission property can be achieved by implanting the SI-GaAs with 1.5 MeV He+ ions of about 1×1016 cm-2 at room temperature.

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Related Author

YANG Kang MA Mingwang CHEN Xiliang ZHU Zhiyong

马明旺

陈西良

朱智勇

Related Institution

Shanghai Institute of Applied Physics, Chinese Academy of Sciences

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