A study of photoluminescence and micro-Raman scattering in C-implanted GaN

ZHANG Limin ZHANG Xiaodong LIU Zhengmin

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A study of photoluminescence and micro-Raman scattering in C-implanted GaN

更新时间：2021-03-05

- A study of photoluminescence and micro-Raman scattering in C-implanted GaN
- NUCLEAR TECHNIQUES Vol. 33, Issue 1, (2010)
- 作者机构：
  
  兰州大学核科学与技术学院
- 作者简介：
- 基金信息：
  
  国家自然科学基金(No.10605011)资助
- DOI：
  CLC： O472.3
- Published：01 January 2010
- 稿件说明：
移动端阅览
[1]张利民,张小东,刘正民.C注入GaN光致发光和微区拉曼散射的研究[J].核技术,2010,33(01):15-19.

ZHANG Limin ZHANG Xiaodong LIU Zhengmin. A study of photoluminescence and micro-Raman scattering in C-implanted GaN[J]. Nuclear techniques, 2010, 33(1): 15-19.
[1]张利民,张小东,刘正民.C注入GaN光致发光和微区拉曼散射的研究[J].核技术,2010,33(01):15-19. DOI：

ZHANG Limin ZHANG Xiaodong LIU Zhengmin. A study of photoluminescence and micro-Raman scattering in C-implanted GaN[J]. Nuclear techniques, 2010, 33(1): 15-19. DOI：

摘要

使用光致发光谱和微区拉曼散射谱的测量

研究了C离子注入原生无黄光发射的GaN。C离子的注入剂量范围为1013-1017cm-2。发光谱的研究表明

C注入的GaN经950℃高温退火后出现了黄光发射

而近带边发射峰的峰位则由于C注入产生的某种缺陷而发生了蓝移。拉曼谱的测量表明

GaN薄膜的应力不随C注入而改变。当注入剂量增加至1015cm-2时

出现了与无序激活拉曼散射相关的300cm-1峰

但随着注入剂量进一步增加

300cm-1峰减弱并未消失

这被归因于注入束流强度随注入剂量增大。

Abstract

GaN samples (no yellow luminescence) in their as-grown states were implanted with 1013-1017 C ions/cm2 and studied by photoluminescence spectra and micro-Raman scattering spectra.The photoluminescence study showed that yellow luminescences were produced in the C-implanted GaN after 950°C annealing

and the peaks of the near band edge emissions showed blue-shifts after C implantation.The Raman measurements indicated that the stresses in GaN films did not change after C implantation.The samples implanted with 1015 cm-2 carbon ions had the Raman peak at 300 cm-1

which is associated to the disorder-activated Raman scattering.However

further increasing the implantation dose resulted decreased intensity of the 300 cm-1 peak

due to the ion beam current increase with the implantation dose.

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