Study of irradiation test on typical optoelectronic device by <sup>60</sup>Co γ-rays

LIU Weixin XU Daojin WU Qinzhi

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Study of irradiation test on typical optoelectronic device by ⁶⁰Co γ-rays

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- Study of irradiation test on typical optoelectronic device by ⁶⁰Co γ-rays
- NUCLEAR TECHNIQUES Vol. 33, Issue 8, (2010)
- 作者机构：
  
  上海航天技术研究院第八○八研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN36
- Published：01 August 2010
- 稿件说明：
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[1]刘伟鑫,徐导进,吾勤之.典型光电器件~(60)Co γ射线辐照试验研究[J].核技术,2010,33(08):584-587.

LIU Weixin XU Daojin WU Qinzhi. Study of irradiation test on typical optoelectronic device by ⁶⁰Co γ-rays[J]. Nuclear techniques, 2010, 33(8): 584-587.
[1]刘伟鑫,徐导进,吾勤之.典型光电器件~(60)Co γ射线辐照试验研究[J].核技术,2010,33(08):584-587. DOI：

LIU Weixin XU Daojin WU Qinzhi. Study of irradiation test on typical optoelectronic device by ⁶⁰Co γ-rays[J]. Nuclear techniques, 2010, 33(8): 584-587. DOI：

摘要

用60Coγ射线对GaAlAs异质结红外发光二极管OP224和NPN型Si光电三极管OP604进行了电离辐照试验

分析了试验器件在60Coγ射线辐照下氧化物陷阱电荷和界面态陷阱电荷的积累效应。结果表明

随着辐照累积剂量的增加

OP224正向电流的最大值逐渐下降

红外光强度逐渐衰减;OP604的暗电流逐渐增大

光电流逐渐下降。

Abstract

Irradiation test of GaAlAs heterojunction infrared emitting diode OP224 and NPN-silicon phototransistor OP604 were performed by using 60Co γ-rays.The cumulative effect of oxide-trap charge and interface-trap charge under 60Co γ-rays irradiation were analyzed.The results showed that as the irradiation dose increased

the maximum forward current and the infrared light intensity of GaAlAs heterojunction infrared emitting diode OP224 gradually decreased;the dark current of NPN-silicon phototransistor OP604 gradually increased

and the photocurrent decreased.

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Study of irradiation test on typical optoelectronic device by 60Co γ-rays

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摘要

Abstract

关键词

Keywords

references

Study of irradiation test on typical optoelectronic device by ⁶⁰Co γ-rays