MD study on temperature effects of SiF<sub>3</sub><sup>+</sup> etching SiC surfaces

HE Pingni~

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MD study on temperature effects of SiF₃⁺ etching SiC surfaces

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- MD study on temperature effects of SiF₃⁺ etching SiC surfaces
- NUCLEAR TECHNIQUES Vol. 33, Issue 12, (2010)
- 作者机构：
  
  1. 贵州大学PSI研究所MEMS课题组
  2. 贵州大学理学院
  3. 四川大学原子核科学技术研究所辐射物理及技术教育部重点实验室
  4. 荷兰皇家科学院等离子体所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TG664
- Published：01 December 2010
- 稿件说明：
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[1]贺平逆,吕晓丹,赵成利,苟富均.样品温度对SiF_3~+与SiC表面相互作用影响的分子动力学研究[J].核技术,2010,33(12):945-950.

HE Pingni~. MD study on temperature effects of SiF₃⁺ etching SiC surfaces[J]. Nuclear techniques, 2010, 33(12): 945-950.
[1]贺平逆,吕晓丹,赵成利,苟富均.样品温度对SiF_3~+与SiC表面相互作用影响的分子动力学研究[J].核技术,2010,33(12):945-950. DOI：

HE Pingni~. MD study on temperature effects of SiF₃⁺ etching SiC surfaces[J]. Nuclear techniques, 2010, 33(12): 945-950. DOI：

摘要

用分子动力学模拟方法研究样品温度对入射能量150 eV、45°入射的SiF

与SiC表面的相互作用过程的影响。模拟中使用Graves等开发的用于Si-F-C体系的Tersoff-Brenner势能函数。模拟结果显示

所有温度下入射SiF

与SiC表面相互作用后全部发生分解

绝大多数分解产物沉积于SiC表面。随Si和F在表面的沉积

SiC表面形成Si

反应层。在温度300、500、700、900 K时

SiC中Si的刻蚀率分别为0.061、0.080、0.085、0.104

C的刻蚀率分别为0.019、0.030、0.034、0.039。SiC中Si比C更易被刻蚀

这和实验结果一致。主要含Si刻蚀产物为SiF

含C刻蚀产物为Si

。主要的刻蚀机制为化学增强的物理溅射。

Abstract

In this study

molecular dynamics simulations were performed to investigate temperature effects of SiF

bombarding SiC surfaces at the incident energy of 150 eV.The improved Tersoff-Brenner type potential energy function for the Si-C-F system was chosen.The simulation results show that all incident SiF

dissociate and most dissociated products deposit on the surface.A Si

reactive layer is formed by SiF

continuously bombarding. The etch yield of Si atoms is higher than that of C atoms in SiC.This is in good agreement with experimental data. When etching of C and Si reaches steady state at 300

500

700 and 900 K

the etching yields of Si are about 0.061

0.080

0.085 and 0.104

respectively

and the etching yields of C are about 0.019

0.030

0.034 and 0.039

respectively. In the etching products

SiF

species are dominant Si-containing products

and Si

is dominant C-containing products.Most etching products are produced by chemical-enhanced physical sputtering.

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MD study on temperature effects of SiF3+ etching SiC surfaces

DOI：

摘要

Abstract

关键词

Keywords

references

MD study on temperature effects of SiF₃⁺ etching SiC surfaces