Accelerator-TEM interface facility and application

LIU Chuansheng~1 LI Ming~1 HE Jun~1 YANG Zheng~1 ZHOU Lin~1 WANG Zesong~1 GUO Liping~1 JIANG Changzhong~1 YANG Shibo~1 LIU Jiarui~2 Lee J C~3 FU DeJun~1 FAN Xiangjun~1 1

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Accelerator-TEM interface facility and application

更新时间：2021-03-05

- Accelerator-TEM interface facility and application
- NUCLEAR TECHNIQUES Vol. 33, Issue 12, (2010)
- 作者机构：
  
  1. 武汉大学物理科学与技术学院加速器实验室
  2. Texas Center for Superconductivity University of Houston
  3. Quantum-Functional Semiconductor Research Center Dongguk University
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10875090)资助
- DOI：
  CLC： O572.211
- Published：01 December 2010
- 稿件说明：
移动端阅览
[1]刘传胜,黎明,何俊,杨铮,周霖,王泽松,郭立平,蒋昌忠,杨世柏,刘家瑞,Lee J C,付德君,范湘军.加速器联机装置运行状况[J].核技术,2010,33(12):891-897.

LIU Chuansheng~1 LI Ming~1 HE Jun~1 YANG Zheng~1 ZHOU Lin~1 WANG Zesong~1 GUO Liping~1 JIANG Changzhong~1 YANG Shibo~1 LIU Jiarui~2 Lee J C~3 FU DeJun~1 FAN Xiangjun~1 1. Accelerator-TEM interface facility and application[J]. Nuclear techniques, 2010, 33(12): 891-897.
[1]刘传胜,黎明,何俊,杨铮,周霖,王泽松,郭立平,蒋昌忠,杨世柏,刘家瑞,Lee J C,付德君,范湘军.加速器联机装置运行状况[J].核技术,2010,33(12):891-897. DOI：

LIU Chuansheng~1 LI Ming~1 HE Jun~1 YANG Zheng~1 ZHOU Lin~1 WANG Zesong~1 GUO Liping~1 JIANG Changzhong~1 YANG Shibo~1 LIU Jiarui~2 Lee J C~3 FU DeJun~1 FAN Xiangjun~1 1. Accelerator-TEM interface facility and application[J]. Nuclear techniques, 2010, 33(12): 891-897. DOI：

摘要

2008年武汉大学加速器联机系统初步建成

200 kV离子注入机至透射电镜束线进行了运行调试

开展了气体离子注入单晶Si、GaAs、Ag纳米晶和超临界反应堆材料（C276和6XN）的原位结构研究。结果表明

样品在注入至一定剂量时发生明显多晶和非晶化

单晶Si出现非晶化的临界剂量在10

-2

。C276材料经1×10

-2

的Ar离子辐照后

产生尺寸3-12 nm的位错环

其密度随剂量提高而增大

至5×10

-2

出现多晶

剂量超过3×10

-2

出现非晶化。在加速器-电镜联机光路上安装在线RBS靶室对离子束辐照材料进行元素成分和晶格定位测试。靠近电镜端安装50 kV低能离子源

开展核材料中氦泡形成过程的原位观测。对RBS/C装置进行数字化改造

用Labview控制系统运行

目前可进行计算机控制的背散射沟道测试。

Abstract

An accelerator-TEM interface facility has been established at Wuhan University in 2008.The system consists of an H800 TEM linked to a 200 kV ion implanter and a 2×1.7 MV tandem accelerator.Nitrogen ions at 115 keV were successfully transported from the implanter into the TEM chamber through the interface system

and the ion currents measured at the entrance of the TEM column were between 20 and 180 nA.Structural evolution caused by ion irradiation in Si

GaAs

nanocrystal Ag was observed in situ.The in situ observation showed that the critical implantation dose for amorphization of Si is 10

-2

.The nuclear material C276 samples implanted with 115 keV Ar

was also studied

and dislocation loops sized at 3-12 nm were clearly observed after implantation to doses of over 1×10

.The density of the loops increased with the dose.Evolution to polycrystalline and amorphous structures were observed at 5×l0

-2

and 3×10

respectively.An in situ RBS/C chamber was installed on the transport line of the accelerator-TEM interface system.This enables in situ measurement of composition and location of the implanted species in lattice of the samples.In addition

a 50 kV low-energy gaseous ion generator was installed close to the TEM chamber

which facilitates in situ TEM observation of helium bubbles formed in helium-implanted materials.

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Related Author

SONG Bo GUO Liping LI Ming LIU Chuansheng YE Mingsheng FU Dejun FAN Xiangjun

郭立平

黎明

刘传胜

叶明生

付德君

范湘军

GAO Zihe

Related Institution

武汉大学物理学院加速器实验室

Accelerator Laboratory, School of Physics, Wuhan University

Shanghai Advanced Research Institute, Chinese Academy of Sciences

University of Chinese Academy of Sciences

Shanghai Institute of Applied Physics, Chinese Academy of Sciences

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