Radiation damage to working or zero-biased JFET-input operational amplifiers

ZHENG Yuzhan1; 3 LU Wu1; 2 REN Diyuan1; 2 WANG Yiyuan1; 3 CHEN Rui1; 3 FEI Wuxiong1

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Radiation damage to working or zero-biased JFET-input operational amplifiers

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- Radiation damage to working or zero-biased JFET-input operational amplifiers
- NUCLEAR TECHNIQUES Vol. 33, Issue 5, (2010)
- 作者机构：
  
  1. 中国科学院新疆理化技术研究所
  2. 新疆电子信息材料与器件重点实验室
  3. 中国科学院研究生院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722.77
- Published：01 May 2010
- 稿件说明：
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[1]郑玉展,陆妩,任迪远,王义元,陈睿,费武雄.正常工作状态与零偏置JFET输入运算放大器的辐射损伤[J].核技术,2010,33(05):357-361.

ZHENG Yuzhan1, 3 LU Wu1, 2 REN Diyuan1, et al. Radiation damage to working or zero-biased JFET-input operational amplifiers[J]. Nuclear techniques, 2010, 33(5): 357-361.
[1]郑玉展,陆妩,任迪远,王义元,陈睿,费武雄.正常工作状态与零偏置JFET输入运算放大器的辐射损伤[J].核技术,2010,33(05):357-361. DOI：

ZHENG Yuzhan1, 3 LU Wu1, 2 REN Diyuan1, et al. Radiation damage to working or zero-biased JFET-input operational amplifiers[J]. Nuclear techniques, 2010, 33(5): 357-361. DOI：

摘要

对处于正常工作和零偏置状态的JFET输入运算放大器

进行了高低剂量率辐射试验。结果表明

工作状态影响JFET运放电路的辐射效应和辐射损伤。正常工作状态下

JFET输入运算放大器表现出时间相关效应

而零偏置状态下则具有低剂量率损伤增强效应。高剂量率或低剂量率辐射情况下

正常工作的JFET输入运放电路参数退化大于或小于零偏置状态。高剂量率辐射会在JFET输入运放的基本单元双极晶体管产生氧化物正电荷和界面陷阱。从氧化物正电荷和界面态与工作状态的关系方面

对JFET运放电路的退化行为进行了解释。

Abstract

High-or low-dose-rate irradiation was performed on JFET-input operational amplifiers(op-amps) under normal operating or zero-biased conditions.The results show that operational conditions have a great influence on the radiation effects and damage to JFET-input operational amplifiers.Under normal condition

the JFET-input op-amps exhibited time-dependent effect(TDE);while they show enhanced low-dose-rate sensitivity(ELDRS) at zero-biased condition.Compared with zero-biased condition

the JFET-input op-amps degrade more severely at normal condition for high-dose-rate irradiation;while for the low-dose-rate case

they degraded more at normal condition.Irradiation would induce positive oxide-trapped charge and interface traps in bipolar transistors

which are the basic components in JFET-input op-amps.From the dependence of oxide trapped charge and interface traps on operational conditions

the degradation behavior is discussed.

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