HfNx sample was grown on SiO2/Si substrate by metal organic chemical vapor deposition(MOCVD).Rutherford backscattering spectrometry(RBS)

X-ray powder diffraction(XRD) and X-ray reflectivity(XRR) were used to characterize the HfNx thin film.The results showed that the ratio of N atoms to Hf atoms in the HfNx thin film was around 1.15

and the HfNx thin film

with a smooth surface and an interface of small roughness on the substrate

was a polycrystalline thin film grown preferentially along the(111) crystal direction.