Impact of process parameters on total ionizing dose effect on SOI NMOS

HU Zhiliang HE Chaohui

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Impact of process parameters on total ionizing dose effect on SOI NMOS

更新时间：2021-03-05

- Impact of process parameters on total ionizing dose effect on SOI NMOS
- NUCLEAR TECHNIQUES Vol. 33, Issue 10, (2010)
- 作者机构：
  
  西安交通大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.1
- Published：01 October 2010
- 稿件说明：
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[1]胡志良,贺朝会.工艺参数对SOI NMOS总剂量效应的影响[J].核技术,2010,33(10):779-782.

HU Zhiliang HE Chaohui. Impact of process parameters on total ionizing dose effect on SOI NMOS[J]. Nuclear techniques, 2010, 33(10): 779-782.
[1]胡志良,贺朝会.工艺参数对SOI NMOS总剂量效应的影响[J].核技术,2010,33(10):779-782. DOI：

HU Zhiliang HE Chaohui. Impact of process parameters on total ionizing dose effect on SOI NMOS[J]. Nuclear techniques, 2010, 33(10): 779-782. DOI：

摘要

本文模拟了0.25μm SOI NMOS的总剂量效应

I-V特性曲线随总剂量变化趋势与实测曲线一致。在此基础上探讨了器件在不同掺杂浓度、硅膜厚度、埋氧层厚度以及栅氧层厚度等工艺条件下的总剂量效应

分析了一定剂量条件下各项工艺引起器件性能变化的原因。结果表明

源漏高掺杂、薄硅膜、适当厚度的埋氧层和较薄的栅氧层均有利于提高SOI NMOS的抗总剂量效应的能力。这为器件提高抗总剂量效应设计和加固提供了一定的理论依据。

Abstract

Total ionizing dose effect on 0.25 μm SOI NMOS is simulated in this paper. The simulated I-V characteristics curves for different total doses are in good agreement with experimental data. Total ionizing dose effects for various process parameters

such as doping concentration

silicon film thickness

buried oxide layer thickness and gate oxide layer thickness

are investigated under 104 Gy(Si) total ionizing dose for SOI NMOS. The results show that SOI NMOS with heavily doped thin gate oxide layer

appropriate thickness of buried oxide layer and thin silicon film is the best tolerant. The reasons are discussed. These are of help in device hardening design against total ionizing dose effects.

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