M-C simulation of low energy electron backscattering from ultra-thin film on a substrate

ZHUO Jun NIU Shengli ZHU Jinhui HUANG Liuxing

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M-C simulation of low energy electron backscattering from ultra-thin film on a substrate

更新时间：2021-03-05

- M-C simulation of low energy electron backscattering from ultra-thin film on a substrate
- NUCLEAR TECHNIQUES Vol. 33, Issue 11, (2010)
- 作者机构：
  
  西北核技术研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： O484.5
- Published：01 November 2010
- 稿件说明：
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[1]卓俊,牛胜利,朱金辉,黄流兴.固体衬底上超薄膜表面的低能电子背散射系数计算研究[J].核技术,2010,33(11):828-831.

ZHUO Jun NIU Shengli ZHU Jinhui HUANG Liuxing. M-C simulation of low energy electron backscattering from ultra-thin film on a substrate[J]. Nuclear techniques, 2010, 33(11): 828-831.
[1]卓俊,牛胜利,朱金辉,黄流兴.固体衬底上超薄膜表面的低能电子背散射系数计算研究[J].核技术,2010,33(11):828-831. DOI：

ZHUO Jun NIU Shengli ZHU Jinhui HUANG Liuxing. M-C simulation of low energy electron backscattering from ultra-thin film on a substrate[J]. Nuclear techniques, 2010, 33(11): 828-831. DOI：

摘要

应用单次碰撞直接Monte Carlo方法模拟了keV级低能电子在超薄膜/固体衬底结构材料中的输运过程

计算研究了不同能量低能电子在几十nm厚超薄膜表面的背散射系数。给出了几种常用超薄膜/固体衬底结构的电子背散射系数r随薄膜厚度D的变化曲线

及r-D曲线线性段背散射常数C随电子入射能量的变化关系。结果表明

在低能电子入射下

r-D曲线初始段存在单一的线性区

背散射常数C随入射电子能量减小而增加

并最终达到一极大值

该规律可作为薄膜厚度测量中选择电子能量的重要参考依据。

Abstract

Backscattering coefficients of low energy electron beams impinging on ultra-thin films on a substrate were simulated with Monte Carlo code.All the interaction events experienced by single electron were simulated in chronological succession.The dependence of backscattering coefficient

on thickness of the thin film

was calculated and analyzed.The results show that there is one linear range

and the slope C of the linear range will arises until it reaches a maximum value while the energy of impinging electron decreases.This will provide reference for energy of incidence electron selection in ultra-thin film measurement.

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Related Author

Jiaqing YAN

Yuguang XIE

Tao HU

Junguang LYU

Li ZHOU

Related Institution

Research Institute No.290 China National Nuclear Corporation

State Key Laboratory of Particle Detection and Electronics

Institute of High Energy Physics, Chinese Academy of Sciences

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