Study on ZnO/α-Al<sub>2</sub>O<sub>3</sub> interface structure by X-ray grazing incident diffraction

SUN Bai1; 2 KANG Chaoyang1 LI Ruipeng1 LIU Zhongliang1 TANG Jun1 XU Pengshou1 PAN Guoqiang1 1

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Study on ZnO/α-Al₂O₃ interface structure by X-ray grazing incident diffraction

更新时间：2021-03-12

- Study on ZnO/α-Al₂O₃ interface structure by X-ray grazing incident diffraction
- NUCLEAR TECHNIQUES Vol. 32, Issue 7, (2009)
- 作者机构：
  
  1. 中国科学技术大学国家同步辐射实验室
  2. 中国科学院合肥智能机械研究所
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助课题(50532070)资助
- DOI：
  CLC： O484
- Published：01 July 2009
- 稿件说明：
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[1]孙柏,康朝阳,李锐鹏,刘忠良,唐军,徐彭寿,潘国强.ZnO/α-Al_2O_3界面结构的掠入射X射线衍射研究[J].核技术,2009,32(07):492-496.

SUN Bai1, 2 KANG Chaoyang1 LI Ruipeng1 LIU Zhongliang1 TANG Jun1 XU Pengshou1 PAN Guoqiang1 1. Study on ZnO/α-Al₂O₃ interface structure by X-ray grazing incident diffraction[J]. Nuclear techniques, 2009, 32(7): 492-496.
[1]孙柏,康朝阳,李锐鹏,刘忠良,唐军,徐彭寿,潘国强.ZnO/α-Al_2O_3界面结构的掠入射X射线衍射研究[J].核技术,2009,32(07):492-496. DOI：

SUN Bai1, 2 KANG Chaoyang1 LI Ruipeng1 LIU Zhongliang1 TANG Jun1 XU Pengshou1 PAN Guoqiang1 1. Study on ZnO/α-Al₂O₃ interface structure by X-ray grazing incident diffraction[J]. Nuclear techniques, 2009, 32(7): 492-496. DOI：

摘要

采用脉冲激光沉积（PLD）技术

以α-Al2O3（001）为衬底

在不同衬底温度下制备ZnO薄膜。利用X射线衍射（XRD）和同步辐射掠入射X射线衍射（GID）研究了薄膜的结晶性能和薄膜与衬底的界面结构。实验结果表明

在衬底温度较低（450℃）时

ZnO薄膜主要受衬底拉应力的作用

使界面处a方向的晶格常数增大;而在衬底温度较高（750℃）时

ZnO薄膜主要受衬底压应力的作用

使界面处a方向的晶格常数减小;在优化的衬底温度（650℃）下

ZnO薄膜受到的衬底应力较小

结晶性最好。且ZnO薄膜垂直方向的晶格排列要比面内的晶格排列更有序。

Abstract

ZnO thin films were grown on α-Al2O3(001) substrates at different temperatures by pulsed laser deposition(PLD).X-ray diffraction(XRD) and synchrotron radiation X-ray grazing incident diffraction(GID) were employed to study the crystalline quality and interface structure of the ZnO film on α-Al2O3(001).The results show that at lower temperature(450℃)

the films are forced by the tensile stress of the substrate

which leads to increased lattice constant a near the interface.At the higher temperature(750℃)

the films are forced by the pressure stress of the substrate

which leads to decreased lattice constant a near the interface.At the optimized temperature(650℃)

the films are forced by the least stress of the substrate

hence the best crystalline quality of ZnO thin film.We also find that the lattice alignment of the vertical direction is more order than that of the plane.

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Study on ZnO/α-Al2O3 interface structure by X-ray grazing incident diffraction

DOI：

摘要

Abstract

关键词

Keywords

references

Study on ZnO/α-Al₂O₃ interface structure by X-ray grazing incident diffraction