An experimental study on total dose effects in SRAM-based FPGAs

YAO Zhibin HE Baoping ZHANG Fengqi GUO Hongxia LUO Yinhong WANG Yuanming ZHANG Keying

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An experimental study on total dose effects in SRAM-based FPGAs

更新时间：2021-03-12

- An experimental study on total dose effects in SRAM-based FPGAs
- NUCLEAR TECHNIQUES Vol. 32, Issue 12, (2009)
- 作者机构：
  
  西北核技术研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN791
- Published：01 December 2009
- 稿件说明：
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[1]姚志斌,何宝平,张凤祁,郭红霞,罗尹虹,王圆明,张科营.SRAM型FPGA总剂量效应实验研究[J].核技术,2009,32(12):935-939.

YAO Zhibin HE Baoping ZHANG Fengqi GUO Hongxia LUO Yinhong WANG Yuanming ZHANG Keying. An experimental study on total dose effects in SRAM-based FPGAs[J]. Nuclear techniques, 2009, 32(12): 935-939.
[1]姚志斌,何宝平,张凤祁,郭红霞,罗尹虹,王圆明,张科营.SRAM型FPGA总剂量效应实验研究[J].核技术,2009,32(12):935-939. DOI：

YAO Zhibin HE Baoping ZHANG Fengqi GUO Hongxia LUO Yinhong WANG Yuanming ZHANG Keying. An experimental study on total dose effects in SRAM-based FPGAs[J]. Nuclear techniques, 2009, 32(12): 935-939. DOI：

摘要

为了探索SRAM型FPGA器件的总剂量效应测试方法及效应敏感参数

以XC2S100为实验样品

设计了两种配置电路

利用60Coγ辐照装置进行了总剂量效应辐照实验。通过对实验结果的分析

给出了SRAM型FPGA器件配置存储器及块存储器的测试流程

并指出功耗电流是表征效应的最敏感参数。这些结果对建立SRAM型FPGA的考核方法及测试方法打下了坚实的基础。

Abstract

In order to study testing methods and find sensitive parameters in total dose effects on SRAM-based FPGA

XC2S100 chips were irradiated by 60Co γ-rays and tested with two test circuit designs.By analyzing the experimental results

the test flow of configuration RAM and bock RAM was given

and the most sensitive parameter was obtained.The results will be a solid foundation for establishing test specification and evaluation methods of total dose effects on SRAM-based FPGAs.

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