Restoration of an electrical breakdown Terahertz emitter by 2 MeV He~+ ion implantation

YANG Kang MA Mingwang CHEN Xiliang ZHU Zhiyong

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Restoration of an electrical breakdown Terahertz emitter by 2 MeV He~+ ion implantation

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- Restoration of an electrical breakdown Terahertz emitter by 2 MeV He~+ ion implantation
- NUCLEAR TECHNIQUES Vol. 32, Issue 1, (2009)
- 作者机构：
  
  中国科学院上海应用物理研究所
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(10675157)资助
- DOI：
  CLC： TL503.3
- Published：01 January 2009
- 稿件说明：
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[1]杨康,马明旺,陈西良,朱智勇.2MeV He~+离子注入修复太赫兹发射源[J].核技术,2009,32(01):27-30.

YANG Kang MA Mingwang CHEN Xiliang ZHU Zhiyong. Restoration of an electrical breakdown Terahertz emitter by 2 MeV He~+ ion implantation[J]. Nuclear techniques, 2009, 32(1): 27-30.
[1]杨康,马明旺,陈西良,朱智勇.2MeV He~+离子注入修复太赫兹发射源[J].核技术,2009,32(01):27-30. DOI：

YANG Kang MA Mingwang CHEN Xiliang ZHU Zhiyong. Restoration of an electrical breakdown Terahertz emitter by 2 MeV He~+ ion implantation[J]. Nuclear techniques, 2009, 32(1): 27-30. DOI：

摘要

为修复因加载过高外置偏压而被击穿的太赫兹光电导天线的发射晶体

采用离子注入法对光电导间隙区域进行了2MeVHe+离子注入处理。经过1016ions/cm2He+离子处理后

光电导天线的电阻由约800?变为60M?

基本恢复到了击穿前的水平。通过对比辐照前后太赫兹发射源在空气气氛中的时域谱和频域谱

发现离子辐照后太赫兹信号强度有了十分明显的增强

时域光谱峰值信号电流由辐照前的2nA增加到了辐照后的8nA

峰值功率增幅超过了一个量级

且发现处理后光电导天线的频谱相对于辐照前有了明显的展宽。

Abstract

The irradiation of solids by energetic particles may cause extensive displacement cascades and point defects (vacancies and interstitials)

and can be widely used for material modification. In order to repair an electrical breakdown photoconductive antenna (PCA)

we irradiated the (100)-oriented

low-temperature (LT) grown GaAs substrate with 1016/cm2 of 2 MeV helium ions. After being implanted

electric resistance of the PCA has increased from 800 ? to 60 M?. The irradiated PCA exhibits improvements in the output power in comparison with the electrical breakdown PCA and its signal intensity has increased from 2 nA to 8 nA. Accordingly

its output power has become more than one order of magnitude higher than that before irradiation. The frequency range of PCA has obviously improvement.

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中国科学院研究生院

Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China) 2

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