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大连理工大学物理与光电工程学院
Published:01 March 2009
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[1]梅显秀,王忠,郝胜智,秦颖,林国强,董闯.强流脉冲电子束辐照对铝薄膜的结构和性能影响[J].核技术,2009,32(03):161-164.
MEI Xianxiu WANG Zhong HAO Shengzhi QIN Ying LIN Guoqiang DONG Chuang. Structure and performance of Al films deposited on DZ4 alloy by high-current pulse electron beam treatment[J]. Nuclear techniques, 2009, 32(3): 161-164.
[1]梅显秀,王忠,郝胜智,秦颖,林国强,董闯.强流脉冲电子束辐照对铝薄膜的结构和性能影响[J].核技术,2009,32(03):161-164. DOI:
MEI Xianxiu WANG Zhong HAO Shengzhi QIN Ying LIN Guoqiang DONG Chuang. Structure and performance of Al films deposited on DZ4 alloy by high-current pulse electron beam treatment[J]. Nuclear techniques, 2009, 32(3): 161-164. DOI:
用多弧离子镀方法在DZ4镍基合金基体上沉积3μm厚Al膜
用强流脉冲电子束辐照处理
加速电压为27kV
束流密度为1.5J/cm2
脉冲数为1次、5次和10次。SEM表面分析显示
脉冲处理后薄膜表面平整度随脉冲次数增加
但10次脉冲处理后有明显的微裂纹。电子束处理后有熔坑和喷发现象
5次脉冲处理后喷发现象最明显。截面的EPMA分析显示
电子束处理使Al膜与基体间混合。掠入射XRD分析表明
随着脉冲次数增加
Al含量减少
基体Ni含量增加
1次脉冲处理有非晶成份出现
多次脉冲处理后有NiAl新相出现
有利于薄膜耐腐蚀性能的提高。电子束辐照Al膜的耐腐蚀性能明显提高
自腐蚀电位提高约70%。
Aluminum films of 3 μ m were deposited on DZ4 alloy by multi-arc ion plating
and were treated by HCPEB (high-current pulse electron beam) at 27 kV in a flux density of 1.5 J/cm2 with the pulse frequency being 1
5 or 10. SEM images of the samples show that the Al film treated by one pulse became leveled
and the surface smoothness increased with the pulse frequency
but the film treated by 10 pulses had obvious micro crack appearance. Melt pit and eruption phenomenon were observed in the treated films
with the 5-pulse treated being the most obvious. Scanning electron probe microscopy analysis of the film cross-section revealed that the film had been mixed with the substrate. Glancing incidence XRD analysis of the films indicated that
with increasing pulse frequency
the film’s Al content reduced
and the Ni content of the substrate increased. The film treated by one pulse had non-crystalline phase
while the multi-pulse processed films had new phase of NiAl
which is advantageous in improving anti-corrosive performance enhancement of the film. An improvement of about 70% was observed in corrosion electric potential test of the 10-pulse irradiated film.
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