AlN films deposited by middle-frequency magnetron sputtering

REN Kefei YING Mingli ZHOU Changwei FU Dejun

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AlN films deposited by middle-frequency magnetron sputtering

更新时间：2021-03-12

- AlN films deposited by middle-frequency magnetron sputtering
- NUCLEAR TECHNIQUES Vol. 32, Issue 3, (2009)
- 作者机构：
  
  武汉大学加速器实验室
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10675095、10875091)资助
- DOI：
  CLC： O484.1
- Published：01 March 2009
- 稿件说明：
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[1]任克飞,阴明利,邹长伟,付德君.中频磁控溅射制备AlN薄膜[J].核技术,2009,32(03):169-172.

REN Kefei YING Mingli ZHOU Changwei FU Dejun. AlN films deposited by middle-frequency magnetron sputtering[J]. Nuclear techniques, 2009, 32(3): 169-172.
[1]任克飞,阴明利,邹长伟,付德君.中频磁控溅射制备AlN薄膜[J].核技术,2009,32(03):169-172. DOI：

REN Kefei YING Mingli ZHOU Changwei FU Dejun. AlN films deposited by middle-frequency magnetron sputtering[J]. Nuclear techniques, 2009, 32(3): 169-172. DOI：

摘要

设计了一套阳极层离子源辅助中频磁控溅射装置

并在Si（111）衬底上沉积AlN薄膜。用X射线衍射、原子力显微镜和扫描电镜分析了AlN薄膜的结构、形貌和成分。在优化的实验条件下制备的AlN薄膜具有较强的（002）衍射峰

其半高宽为612–648弧秒。气体流量、衬底偏压、离子源等对薄膜结构有明显影响。

Abstract

A middle-frequency magnetron sputtering with anode-layer ion source assistance was designed and AlN films were deposited on Si(111) substrates by using this system. The structure and composition of the films were characterized by X-ray diffraction

atomic force microscopy and scanning electron microscopy. The films deposited under optimal conditions have strong diffraction of AlN (002) and the FWHM of (002) peaks from different film samples ranges of 612 – 648 arcsec. Gas flow rate

the substrate bias and the application of anode-layer ion source are of obvious influence to the AlN film structure.

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GaN films deposited on Si(111) by intermediate-frequency magnetron sputtering

Related Author

DING Dong YING Mingli ZHOU Changwei GUO Liping FU Dejun

阴明利

邹长伟

郭立平

付德君

Related Institution

Physics Department, Wuhan University

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