Electrical properties of PN junction devices under tritium irradiation

WANG Guanquan YANG Yuqing ZHANG Huaming HU Rui WEI Hongyuan XIONG Xiaoling GAO Hui

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Electrical properties of PN junction devices under tritium irradiation

更新时间：2021-03-12

- Electrical properties of PN junction devices under tritium irradiation
- NUCLEAR TECHNIQUES Vol. 32, Issue 8, (2009)
- 作者机构：
  
  中国工程物理研究院核物理与化学研究所
- 作者简介：
- 基金信息：
  
  中国工程物理研究院科学技术发展基金(2007A02001)资助
- DOI：
  CLC： TM910.2
- Published：01 August 2009
- 稿件说明：
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[1]王关全,杨玉青,张华明,胡睿,魏洪源,熊晓玲,高晖.PN结型器件在氚钛片辐照下电输出性能[J].核技术,2009,32(08):584-587.

WANG Guanquan YANG Yuqing ZHANG Huaming HU Rui WEI Hongyuan XIONG Xiaoling GAO Hui. Electrical properties of PN junction devices under tritium irradiation[J]. Nuclear techniques, 2009, 32(8): 584-587.
[1]王关全,杨玉青,张华明,胡睿,魏洪源,熊晓玲,高晖.PN结型器件在氚钛片辐照下电输出性能[J].核技术,2009,32(08):584-587. DOI：

WANG Guanquan YANG Yuqing ZHANG Huaming HU Rui WEI Hongyuan XIONG Xiaoling GAO Hui. Electrical properties of PN junction devices under tritium irradiation[J]. Nuclear techniques, 2009, 32(8): 584-587. DOI：

摘要

用多片具有不同金属钛膜厚度和充氚量的氚钛片对两种单晶硅基PN结型器件进行了辐照

在线测量了它们的电输出性能并进行了定性分析。结果表明

在本文所采用的钛膜厚度和氚量级下

器件输出短路电流等随充氚量增加而小幅增大

但不成正比关系;器件的掺杂浓度、结深等结构参数对器件电输出性能影响较大。

Abstract

Two kinds of silicon PN junction device were made for irradiation by titanium tritide sources of different activities

and the electrical outputs were measured and analyzed. The results showed that the Isc (short circuit current)

Voc (open circuit voltage) and Pmax(maximum power output) increased with the tritium content

but the increases were not proportional to the tritium content. The electrical properties were affected by doping concentration and junction depth of the devices.

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