0.28-2.80 MeV proton irradiation effects on GalnP/GaAs/Ge multi-junction solar cells for space applications

LIU Yunhong~

doi:null

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0.28-2.80 MeV proton irradiation effects on GalnP/GaAs/Ge multi-junction solar cells for space applications

更新时间：2021-03-12

- 0.28-2.80 MeV proton irradiation effects on GalnP/GaAs/Ge multi-junction solar cells for space applications
- NUCLEAR TECHNIQUES Issue 1, (2008)
- 作者机构：
  
  1. 北京师范大学射线束技术与材料改性教育部重点实验室
  2. 北京师范大学射线束技术与材料改性教育部重点实验室北京 100875 北京师范大学低能核物理研究所,北京,100875
  3. 100875 北京师范大学低能核物理研究所北京 100875 北京市辐射中心北京,北京,100875
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(10675023);北京市自然科学基金(1052009)资助
- DOI：
  CLC： TM914.4
- Published：01 January 2008
- 稿件说明：
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[1]刘运宏,孙旭芳,王荣.0.28-2.80MeV质子辐射对空间实用GaInP/GaAs/Ge多结太阳电池性能的影响[J].核技术,2008(01):47-49.

LIU Yunhong~. 0.28-2.80 MeV proton irradiation effects on GalnP/GaAs/Ge multi-junction solar cells for space applications[J]. Nuclear techniques, 2008, (1): 47-49.
[1]刘运宏,孙旭芳,王荣.0.28-2.80MeV质子辐射对空间实用GaInP/GaAs/Ge多结太阳电池性能的影响[J].核技术,2008(01):47-49. DOI：

LIU Yunhong~. 0.28-2.80 MeV proton irradiation effects on GalnP/GaAs/Ge multi-junction solar cells for space applications[J]. Nuclear techniques, 2008, (1): 47-49. DOI：

摘要

用0.28、0.62和2.80 MeV质子束模拟空间辐射对国产MOCVD方法制备的GaInP/GaAs/Ge多结电池进行质子辐射效应研究。辐照注量为1×10

-2

。对电池的辐射效应用I-V特性和光谱响应测试进行分析。结果表明:随质子辐照能量的增加

太阳电池性能参数I

max

和光谱响应的衰降幅度均减小

0.28MeV质子辐照引起电池性能衰降最显著;低能质子辐照引起中间GaAs电池光谱响应衰降更明显。

Abstract

GaInP/GaAs/Ge multi-junction solar cells fabricated by metal-organic chemical vapor deposition （MOCVD）technique were irradiated by 1×10

-2

protons of 0.28

0.62 or 2.80 MeV.The performance degradation in current-voltage（I-V）characteristics and spectral response of the solar cells was analyzed.The largest degradation rates of short circuit current(I

)

open circuit voltage(V

)

and maximum power output(P

max

)was observed with proton beams of the lowest energy.Also it was observed that degradation of the spectral response reduced with in- creasing proton energy.And the spectral response of the GaAs middle cell degraded more than the GaInP top cell. Thus

the radiation tolerance of the multi-junction solar cells is primarily controlled by the degradation of the GaAs middle cell.

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天津电源研究所乌鲁木齐 830011 中国科学院研究生院

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