50--170 keV proton irradiation on spectral response in GaAs/Ge space solar cell

ZHAO Huijie~1 HE Shiyu~1 XIAO Zhibin~2 SUN Yanzheng~2 XIAO Jingdong~1 ZHANG Yijun~1 1

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50--170 keV proton irradiation on spectral response in GaAs/Ge space solar cell

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- 50--170 keV proton irradiation on spectral response in GaAs/Ge space solar cell
- NUCLEAR TECHNIQUES Issue 1, (2008)
- 作者机构：
  
  1. 哈尔滨工业大学
  2. 中国电子科技集团公司第十八研究所
- 作者简介：
- 基金信息：
  
  国家重点基础研究发展规划项目(G200551343)资助
- DOI：
  CLC： TM914.4
- Published：01 January 2008
- 稿件说明：
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[1]赵慧杰,何世禹,肖志彬,孙彦铮,肖景东,张益君.50-170 keV质子照射对GaAs/Ge太阳能电池光谱响应的影响[J].核技术,2008(01):31-34.

ZHAO Huijie~1 HE Shiyu~1 XIAO Zhibin~2 SUN Yanzheng~2 XIAO Jingdong~1 ZHANG Yijun~1 1. 50--170 keV proton irradiation on spectral response in GaAs/Ge space solar cell[J]. Nuclear techniques, 2008, (1): 31-34.
[1]赵慧杰,何世禹,肖志彬,孙彦铮,肖景东,张益君.50-170 keV质子照射对GaAs/Ge太阳能电池光谱响应的影响[J].核技术,2008(01):31-34. DOI：

ZHAO Huijie~1 HE Shiyu~1 XIAO Zhibin~2 SUN Yanzheng~2 XIAO Jingdong~1 ZHANG Yijun~1 1. 50--170 keV proton irradiation on spectral response in GaAs/Ge space solar cell[J]. Nuclear techniques, 2008, (1): 31-34. DOI：

摘要

用固定能量（100 keV）不同注量(1×10

-3×10

-2

)或固定注量(3×10

-2

)不同能量（50-170 keV）的质子

照射GaAs/Ge太阳电池

获得材料的光谱响应特性随质子能量和注量的变化关系。结果表明

质子辐照对材料的光学性能有破坏性的影响。这种破坏性源于质子辐照引入的大量缺陷

使品格空间的完整性受到破坏

导致少子的扩散长度降低、表面复合速度增加。在质子能量相同的条件下

电池光学性能衰降随照射注量增大;在注量相同的条件下

辐射能量越高

太阳电池光学性能衰降越大。

Abstract

The paper studies spectral response of GaAs/Ge solar cells irradiated to 1.0×10

-3.0×10

-2

by 100 keV protons

or irradiated to 3.0×10

-2

by 50-170 keV protons.The results show that proton irradiation in- duces a great damage in optical characteristics of the solar cell

resulting from the large quantity of irradiation defects that would destroy crystal lattice integrity and reduce the diffusion distance of minority carrier

and thus increase the surface recombination velocity.The damage extent of GaAs/Ge solar cell increases with proton energy and dose in their ranges under investigation.

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