Effect of frequency of dynamic bias to total dose effect of X-rays

HE Yujuan~1 SHI Qian~1 LUO Hongwei~1 EN Yunfei~1 ZHANG Xiaowen~1 LI Bin~2 LIU Yuan~

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Effect of frequency of dynamic bias to total dose effect of X-rays

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- Effect of frequency of dynamic bias to total dose effect of X-rays
- NUCLEAR TECHNIQUES Issue 1, (2008)
- 作者机构：
  
  1. 电子元器件可靠性物理及其应用技术国家级重点实验室
  2. 华南理工大学微电子研究所
  3. 电子元器件可靠性物理及其应用技术国家级重点实验室,广州,510610
  4. ,广州,510640
  5. 510610 华南理工大学微电子研究所广州,广州,510640
- 作者简介：
- 基金信息：
  
  国家十一五预研项目(51323060401);国家重点实验室基金项目(9140C030604070C0304)资助
- DOI：
  CLC： TN386
- Published：01 January 2008
- 稿件说明：
移动端阅览
[1]何玉娟,师谦,罗宏伟,恩云飞,章晓文,李斌,刘远.动态偏置频率对X射线总剂量效应的影响[J].核技术,2008(01):19-22.

HE Yujuan~1 SHI Qian~1 LUO Hongwei~1 EN Yunfei~1 ZHANG Xiaowen~1 LI Bin~2 LIU Yuan~. Effect of frequency of dynamic bias to total dose effect of X-rays[J]. Nuclear techniques, 2008, (1): 19-22.
[1]何玉娟,师谦,罗宏伟,恩云飞,章晓文,李斌,刘远.动态偏置频率对X射线总剂量效应的影响[J].核技术,2008(01):19-22. DOI：

HE Yujuan~1 SHI Qian~1 LUO Hongwei~1 EN Yunfei~1 ZHANG Xiaowen~1 LI Bin~2 LIU Yuan~. Effect of frequency of dynamic bias to total dose effect of X-rays[J]. Nuclear techniques, 2008, (1): 19-22. DOI：

摘要

辐射偏置条件是影响MOSFET（Metal Oxide Silicon Field Effect Transistor）

总剂量辐射效应的主要因素之一

因为辐射时栅氧化层中电荷的产生、传输与俘获都与辐射偏置有关。本文采用10 keV X射线对MOSFET在不同频率的动态偏置条件下进行总剂量辐射

分析了MOSFET辐照前后的阈值电压的漂移量和辐射感生电荷对阈值电压的影响。实验结果表明

动态偏置频率越高

辐射对MOSFET电特性的影响越小

产生的辐射感生电荷越少。

Abstract

Bias voltage applied to MOSFET during irradiation has a major impact on the device response because charge yield

transport

and trapping in oxide are all bias dependent.NMOSFET and PMOSFET under different fre- quency of dynamic bias were irradiated by 10 keV X-rays to study the total dose effect.The shifts of threshold volt- age of the MOSFETs before and after irradiation and effects of the radiation-induced charge on the threshold voltage of MOSFETs are analyzed in this paper.The results showed that the higher the frequency of pulse signal is

the less threshold shift and concentration of the radiation-induced charge were observed at the same pulsed voltage.

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