The compare of total-dose irradiation effects between CMOS 4000 and 54HC devices

WANG Gaili1; 2 YU Xuefeng2 REN Diyuan2 ZHENG Yuzhan1; 2 SUN Jing3 WEN Lin3 1

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The compare of total-dose irradiation effects between CMOS 4000 and 54HC devices

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- The compare of total-dose irradiation effects between CMOS 4000 and 54HC devices
- NUCLEAR TECHNIQUES Issue 5, (2008)
- 作者机构：
  
  1. 新疆理化技术研究所
  2. 新疆大学物理学院,乌鲁木齐,830011
  3. 中国科学院研究生院北京,100049
  4. ,乌鲁木齐,830046
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN432
- Published：01 May 2008
- 稿件说明：
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[1]王改丽,余学峰,任迪远,郑玉展,孙静,文林.CMOS 4000及54HC器件的总剂量辐照响应特性比较[J].核技术,2008(05):348-351.

WANG Gaili1, 2 YU Xuefeng2 REN Diyuan2 ZHENG Yuzhan1, 2 SUN Jing3 WEN Lin3 1. The compare of total-dose irradiation effects between CMOS 4000 and 54HC devices[J]. Nuclear techniques, 2008, (5): 348-351.
[1]王改丽,余学峰,任迪远,郑玉展,孙静,文林.CMOS 4000及54HC器件的总剂量辐照响应特性比较[J].核技术,2008(05):348-351. DOI：

WANG Gaili1, 2 YU Xuefeng2 REN Diyuan2 ZHENG Yuzhan1, 2 SUN Jing3 WEN Lin3 1. The compare of total-dose irradiation effects between CMOS 4000 and 54HC devices[J]. Nuclear techniques, 2008, (5): 348-351. DOI：

摘要

通过对CMOS 4000、54HC系列门电路进行不同偏置条件下的电离辐照实验

比较了电离辐照环境中CMOS 4000和54HC系列电路的总剂量辐照响应特性

对其响应差异进行了较深入的机理研究

并探讨了54HC电路的抗辐射能力测试方法和评判标准。

Abstract

By irradiating CMOS 4000 and 54HC series gate circuits under different biases

characteristics of total dose radiation responses of the devices were compared and mechanisms of the different radiation effects to the two kinds of circuits were investigated.The radiation tolerance testing methods and evaluating standards of the 54HC devices are discussed.

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