Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES

WANG Kefan1; 2 XU Pengshou2 ZHANG Weifeng1 GU Yuzong1 ZHENG Haiwu1 1

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Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES

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- Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES
- NUCLEAR TECHNIQUES Issue 4, (2008)
- 作者机构：
  
  1. 河南大学物理与电子学院微系统物理研究所
  2. 中国科学技术大学国家同步辐射实验室
  3. 河南大学物理与电子学院微系统物理研究所,开封,475004
  4. ,合肥,230029
- 作者简介：
- 基金信息：
- DOI：
  CLC： TB383.2
- Published：01 April 2008
- 稿件说明：
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[1]王科范,徐彭寿,张伟风,顾玉宗,郑海务.湿化学法制备氧化硅超薄膜及其成份和厚度的SRPES测定[J].核技术,2008(04):255-259.

WANG Kefan1, 2 XU Pengshou2 ZHANG Weifeng1 GU Yuzong1 ZHENG Haiwu1 1. Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES[J]. Nuclear techniques, 2008, (4): 255-259.
[1]王科范,徐彭寿,张伟风,顾玉宗,郑海务.湿化学法制备氧化硅超薄膜及其成份和厚度的SRPES测定[J].核技术,2008(04):255-259. DOI：

WANG Kefan1, 2 XU Pengshou2 ZHANG Weifeng1 GU Yuzong1 ZHENG Haiwu1 1. Wet-chemical growth of an ultra-thin silicon oxide film and its composition and thickness measured by SRPES[J]. Nuclear techniques, 2008, (4): 255-259. DOI：

摘要

用C2H5OH溶液氧化H钝化的Si表面（H-Si）得到一层氧化硅超薄膜。原子力显微镜（AFM

Atomic Force Microscope）的结果显示

氧化前后的表面均非常平整。同步辐射光电子能谱（SRPES

Synchrotron Radiation Photoelectron Spectroscopy）的测试结果表明

氧化膜的主要化学成份为SiO2

其平均厚度为0.24nm。衬底温度为500℃时

在此氧化膜表面制备出面密度达9.5×1010cm-2

尺寸集中为（25±5）nm的Ge量子点。初步的生长实验表明

湿化学法制备的氧化硅超薄膜作为外延衬底

可减小Ge量子点的尺寸

提高其面密度。

Abstract

An ultra-thin oxide film was obtained by oxidizing the H-terminated Si(001)surface by absolute C2H5OH solution.AFM observations showed that surface of the oxide film was very flat.Synchrotron radiation photoelectron spectroscopy(SRPES)analysis demonstrated that the oxide film was mainly composed of SiO2

with an average thickness of about 0.24 nm.At 500℃ of the substrate temperature

Ge quantum dots(QDs)of 9.5×1010 cm-2 in density and(25±5)nm in size were grown successfully on the SiO2 film.The result indicates that the SiO2 film made by wet-chemical method can act as epitaxial surface to grow Ge QDs of decreased size and increased density.

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