Thick DLC:Ni multilayer films fabricated by MEVVA ion implantation

QIN Lizhao1; 3 WU Zhenglong2 ZHANG Xu1 LIU Andong1 LIAO Bin1 1

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Thick DLC:Ni multilayer films fabricated by MEVVA ion implantation

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- Thick DLC:Ni multilayer films fabricated by MEVVA ion implantation
- NUCLEAR TECHNIQUES Issue 11, (2008)
- 作者机构：
  
  1. 北京师范大学低能核物理研究所
  2. 遵义师范学院物理系
  3. 北京师范大学分析测试中心
- 作者简介：
- 基金信息：
  
  遵义市科技局、遵义师范学院科技研发基金(0009)资助
- DOI：
  CLC： TB43
- Published：01 November 2008
- 稿件说明：
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[1]覃礼钊,吴正龙,张旭,刘安东,廖斌.MEVVA离子注入技术制备DLC:Ni多层厚膜[J].核技术,2008(11):806-810.

QIN Lizhao1, 3 WU Zhenglong2 ZHANG Xu1 LIU Andong1 LIAO Bin1 1. Thick DLC:Ni multilayer films fabricated by MEVVA ion implantation[J]. Nuclear techniques, 2008, (11): 806-810.
[1]覃礼钊,吴正龙,张旭,刘安东,廖斌.MEVVA离子注入技术制备DLC:Ni多层厚膜[J].核技术,2008(11):806-810. DOI：

QIN Lizhao1, 3 WU Zhenglong2 ZHANG Xu1 LIU Andong1 LIAO Bin1 1. Thick DLC:Ni multilayer films fabricated by MEVVA ion implantation[J]. Nuclear techniques, 2008, (11): 806-810. DOI：

摘要

采用金属蒸汽真空弧（Metal Vapor Vacuum Arc

MEVVA）离子源注入技术

将Ni离子注入到类金刚石（Diamond-like Carbon

DLC）膜中

并重复沉积和注入过程

制备出2个层数分别为10层和15层、厚度达1.0μm和1.5μm、注入剂量不同的DLC:Ni膜样品。性能测试结果显示

膜内应力得到有效释放

膜基结合紧密

仍保持较高sp3含量以及较高硬度和弹性模量

是一种制备DLC厚膜的有效方法。

Abstract

High internal residual stress in diamond-like carbon(DLC) films is a major factor that hinders thick film fabrication.In order to solve this problem

metal vapor vacuum arc(MEVVA) technique was used.DLC film was deposited by filtered cathodic arc deposition

and Ni ions were implanted into the film.By repeating the deposition and implantation

DLC:Ni films of 10 and 15 layers and in thickness of about 1.0 μm and 1.5 μm

respectively

were fabricated.A series of structure and property tests were carried out.The results show that the internal residual stress is released effectively

with increased adhering between the film and substrate.The sp3 contents

the hardness and the elastic modulus of the films are high.These indicate that this method is a feasible technique to fabricate thick DLC films.

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