Total dose irradiation effects on a VDMOS developed at Institute of Microelectronics

CAS were investigated

particularly the electric parameter changes under different bias conditions. It was found that the breakdown voltage degradation by the irradiation depended mainly on the drain bias

whereas the threshold voltage degradation depended mainly on the gate bias. Thus

an innovative and effective method to domestic VDMOS total dose ionization characterization is that threshold voltage radiation hardening characterization should be tested on gate bias condition

and the breakdown voltage radiation hardening characterization

be tested on the drain bias.