A study on yellow luminescence in O and C ion implanted GaN

ZHANG Limin ZHANG Xiaodong YOU Wei WANG Wenxiu GE Qin LIU Zhengmin

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A study on yellow luminescence in O and C ion implanted GaN

更新时间：2021-03-12

- A study on yellow luminescence in O and C ion implanted GaN
- NUCLEAR TECHNIQUES Vol. 31, Issue 8, (2008)
- 作者机构：
  
  兰州大学核科学与技术学院
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10605011)资助
- DOI：
  CLC： O472.3
- Published：01 August 2008
- 稿件说明：
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[1]张利民,张小东,尤伟,王文秀,葛琴,刘正民.O、C离子注入n型GaN的黄光发射研究[J].核技术,2008,31(08):595-599.

ZHANG Limin ZHANG Xiaodong YOU Wei WANG Wenxiu GE Qin LIU Zhengmin. A study on yellow luminescence in O and C ion implanted GaN[J]. Nuclear techniques, 2008, 31(8): 595-599.
[1]张利民,张小东,尤伟,王文秀,葛琴,刘正民.O、C离子注入n型GaN的黄光发射研究[J].核技术,2008,31(08):595-599. DOI：

ZHANG Limin ZHANG Xiaodong YOU Wei WANG Wenxiu GE Qin LIU Zhengmin. A study on yellow luminescence in O and C ion implanted GaN[J]. Nuclear techniques, 2008, 31(8): 595-599. DOI：

摘要

采用光致发光（Photoluminescence

PL）谱的测量

研究了1013

017cm-2的O和C两种离子注入和退火对非有意掺杂的n型GaN黄光发射（Yellow luminescence

YL）的影响

注入后的样品在流动N2的保护下进行退火

退火温度950℃

退火时间30min。对比相同剂量下N离子注入GaN黄光发射

结果表明O、C两种离子的注入在GaN中分别引入了与黄光发射相关的不同的深能级中心

当C离子注入剂量高达1017cm-2时

能引起黄光发射的C相关的深能级中心显著增多。

Abstract

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0×1013 to 1.0×1017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950°C. By comparing with N ion implanted samples

it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition

with a dose of 1017 cm-2

the concentration of deep C centers involving in the YL was enhanced markedly.

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