Synchrotron-radiation photoelectron spectroscopy study on Mn/6H-SiC(0001) interface

WU Yuyu1 LIU Jinfeng1; 2 SUN Bai1; 3 LIU Zhongliang1 XU Pengshou1 CHEN Xiufang4 XU Xiangang4 1

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Synchrotron-radiation photoelectron spectroscopy study on Mn/6H-SiC(0001) interface

更新时间：2021-03-12

- Synchrotron-radiation photoelectron spectroscopy study on Mn/6H-SiC(0001) interface
- NUCLEAR TECHNIQUES Vol. 31, Issue 12, (2008)
- 作者机构：
  
  1. 中国科学技术大学国家同步辐射实验室
  2. 中国工程物理研究院流体物理研究所
  3. 中国科学院合肥智能机械研究所
  4. 山东大学晶体材料国家重点实验室
- 作者简介：
- 基金信息：
  
  国家自然科学基金(50572100)资助
- DOI：
  CLC： O485
- Published：01 December 2008
- 稿件说明：
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[1]武煜宇,刘金锋,孙柏,刘忠良,徐彭寿,陈秀芳,徐现刚.Mn/6H-SiC(0001)界面的同步辐射光电子能谱研究[J].核技术,2008,31(12):900-904.

WU Yuyu1 LIU Jinfeng1, 2 SUN Bai1, 3 LIU Zhongliang1 XU Pengshou1 CHEN Xiufang4 XU Xiangang4 1. Synchrotron-radiation photoelectron spectroscopy study on Mn/6H-SiC(0001) interface[J]. Nuclear techniques, 2008, 31(12): 900-904.
[1]武煜宇,刘金锋,孙柏,刘忠良,徐彭寿,陈秀芳,徐现刚.Mn/6H-SiC(0001)界面的同步辐射光电子能谱研究[J].核技术,2008,31(12):900-904. DOI：

WU Yuyu1 LIU Jinfeng1, 2 SUN Bai1, 3 LIU Zhongliang1 XU Pengshou1 CHEN Xiufang4 XU Xiangang4 1. Synchrotron-radiation photoelectron spectroscopy study on Mn/6H-SiC(0001) interface[J]. Nuclear techniques, 2008, 31(12): 900-904. DOI：

摘要

本文利用同步辐射光电子能谱（SRPES）和X射线光电子能谱（XPS）对金属Mn在6H-SiC（0001）表面的生长模式和Mn/6H-SiC（0001）界面进行了研究。实验结果表明

常温下金属Mn在6H-SiC（0001）表面上表现为二维层状生长模式。随着金属Mn沉积膜厚的增加

样品表面金属性明显增强。沉积过程中

金属Mn并未与SiC衬底发生反应

界面间由于能带弯曲导致费米能级向下移动

并计算出肖特基势垒高度（SBH）大约为1.79eV。当沉积膜厚达到2nm后

样品于250℃退火导致金属Mn向衬底扩散

但未与衬底发生反应。样品于500℃退火后界面间形成Mn的硅化物。

Abstract

Synchrotron-radiation photoelectron spectroscopy (SRPES) and X-ray photoelectron spectroscopy were used to study the early growth mode of Mn deposited on 6H-SiC(0001) surface and Mn/6H-SiC(0001) interface. The results show that the early growth mode at room temperature can be considered as the 2D layer-by-layer mode. With increasing coverage of Mn

the surface reflected a clear metallic characteristic. During the deposition

Mn was quite stable on the SiC surface

a downward Fermi level movement in band structure measurement was observed and the resultant Schottky Barrier Height (SBH) was estimated at about 1.79 eV. When the deposition height was 2nm

annealing the sample at 250°C could induce Mn to diffuse into the SiC substrate

without any chemical reaction. Further annealing at 500°C there were Mn silicide formation at the interface.

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