Synchrotron X-ray diffraction analysis of epitaxial  GaN layer  laterally overgrown

FENG Gan  ZHENG Xinhe  WANG Yutian  YANG Hui  LIANG Junwu

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Synchrotron X-ray diffraction analysis of epitaxial GaN layer laterally overgrown

更新时间：2021-03-12

- Synchrotron X-ray diffraction analysis of epitaxial GaN layer laterally overgrown
- NUCLEAR TECHNIQUES Issue 10, (2002)
- 作者机构：
  
  1. 中国科学院半导体研究所集成光电子学国家联合重点实验室
  2. 中国科学院高能物理研究所同步辐射室,北京,100083
  3. ,北京,100039
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN312
- Published：01 October 2002
- 稿件说明：
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[1]冯淦,郑新和,王玉田,杨辉,梁骏吾,郑文莉,贾全杰.横向外延GaN结晶质量的同步辐射研究[J].核技术,2002(10):770-774.

FENG Gan ZHENG Xinhe WANG Yutian YANG Hui LIANG Junwu. Synchrotron X-ray diffraction analysis of epitaxial GaN layer laterally overgrown[J]. Nuclear techniques, 2002, (10): 770-774.
[1]冯淦,郑新和,王玉田,杨辉,梁骏吾,郑文莉,贾全杰.横向外延GaN结晶质量的同步辐射研究[J].核技术,2002(10):770-774. DOI：

FENG Gan ZHENG Xinhe WANG Yutian YANG Hui LIANG Junwu. Synchrotron X-ray diffraction analysis of epitaxial GaN layer laterally overgrown[J]. Nuclear techniques, 2002, (10): 770-774. DOI：

摘要

采用同步辐射X光衍射技术研究了α -Al2 O3（0 0 0 1）衬底上横向外延GaN的结构特征。发现横向生长区的GaN（0 0 0 1）晶面与窗口区的GaN（0 0 0 1）晶面在垂直掩模方向上存在取向差。ω/2θ联动扫描发现横向生长区的GaN的衍射峰半高宽约为窗口区GaN的一半

这表明横向外延生长技术在降低GaN穿透位错密度的同时

还能大幅度提高GaN的晶粒尺寸

Abstract

The GaN layer grown by epitaxial lateral overgrowth on sapphire (0001) has been investigated by synchrotron X-ray diffraction. The results show that ELO GaN stripes bend towards the SiN x mask in directions perpendicular to the stripe direction. This lead to the GaN (0001) crystal planes in the ’ wings’ (overgrown GaN) exhibit crystallographic tilts away from those in the ’ window’ (seed) regions. The GaN (0002) diffraction was used to determine the grain sizes in the wing region and window region

respectively. It is found that the grain size in the wing region increases about three times comparing to those in window region.

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