Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor

LIU Shuhuan1; 2 GUO Xiaoqiang2 LI Da2 LIN Dongsheng2 JIANG Xinbiao2 ZHU Guangning2 CHEN Wei2 ZHANG Wei3 ZHOU Hui2 SHAO Beibei1 LI Junli1 1

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Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor

更新时间：2021-03-12

- Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor
- NUCLEAR TECHNIQUES Issue 9, (2007)
- 作者机构：
  
  1. 清华大学工程物理系
  2. 西北核技术研究所
  3. 清华大学微电子研究所
  4. 清华大学工程物理系北京100084 西北核技术研究所西安,710613
- 作者简介：
- 基金信息：
- DOI：
  CLC： TL375
- Published：01 September 2007
- 稿件说明：
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[1]刘书焕,郭晓强,李达,林东生,江新标,朱广宁,陈伟,张伟,周辉,邵贝贝,李君利.反应堆脉冲中子和γ射线辐照SiGe HBT器件的退火因子及典型直流参数测量分析[J].核技术,2007(09):745-749.

LIU Shuhuan1, 2 GUO Xiaoqiang2 LI Da2 LIN Dongsheng2 JIANG Xinbiao2 ZHU Guangning2 CHEN Wei2 ZHANG Wei3 ZHOU Hui2 SHAO Beibei1 LI Junli1 1. Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor[J]. Nuclear techniques, 2007, (9): 745-749.
[1]刘书焕,郭晓强,李达,林东生,江新标,朱广宁,陈伟,张伟,周辉,邵贝贝,李君利.反应堆脉冲中子和γ射线辐照SiGe HBT器件的退火因子及典型直流参数测量分析[J].核技术,2007(09):745-749. DOI：

LIU Shuhuan1, 2 GUO Xiaoqiang2 LI Da2 LIN Dongsheng2 JIANG Xinbiao2 ZHU Guangning2 CHEN Wei2 ZHANG Wei3 ZHOU Hui2 SHAO Beibei1 LI Junli1 1. Measurement and analysis of annealing factor and typical dc electronic parameters for SiGe HBT irradiated by neutrons and gamma rays in a pulsed reactor[J]. Nuclear techniques, 2007, (9): 745-749. DOI：

摘要

本工作测量了反应堆脉冲中子、γ辐照SiGeHBT典型直流电参数和退火因子。在反应堆1×10

cm-2的脉冲中子注量和257Gy（Si）γ总剂量辐照后

SiGeHBT静态共射极直流增益减小了20%。辐照后基极电流、结漏电流增大

集电极电流、击穿电压减小。初步分析了SiGeHBT瞬态中子、γ辐射损伤机理。

Abstract

The dc electronic parameters and annealing factor change of SiGe HBT irradiated by neutron and gamma-rays in a pulsed reactor were measured. The dc common emitter static current gain of the SiGe HBTs de- creased by about 20% after the irradiation with 1×1013 cm-2 neutron fluence and 257 Gy(Si) in gamma-ray total dose. The base current and the junction leakage current increased

whereas the collector current and the breakdown voltage decreased for SiGe HBT after the irradiation. Mechanisms of the radiation-induced damage to SiGe HBT are dis- cussed.

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