Chromium oxide films were prepared at room temperature by ion-beam assisted deposition (IBAD)

in which chromium was deposited by 1 keV Ar+ ion sputtering on stainless steel substrates before bombarding the film by 100 keV Ar+ or O+ beam

while pure oxygen gas was introduced into the vacuum chamber. The film samples were characterized by XPS and AES. The results show that components of the films prepared by Ar+ beam bombardment are mainly Cr2O3

whereas the films bombarded by the O+ beam consist of oxides of different chromium valences. The films prepared by the Ar+ beam bomnbardment have less carbon contamination than those by O+ beam. In comparison to the O+ ion bombardment

and the reactivity of oxygen molecules with deposited Cr atoms in the films bombarded by the Ar+ ions is enhanced

and the film sample bombarded by the Ar+ ions has a thicker transition layer (about one-third thicker)

hence an increased adhesion of the film to the substrate.