Microstrain in modulation-doped Al<sub>x</sub>Ga<sub>1-x</sub>  N/GaN heterostructures

TAN Weishi  SHA Hao  SHEN Bo  CAI Hongling  WU Xiaoshan  JIANG Shusheng

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Microstrain in modulation-doped Al_xGa_1-x N/GaN heterostructures

更新时间：2021-03-12

- Microstrain in modulation-doped Al_xGa_1-x N/GaN heterostructures
- NUCLEAR TECHNIQUES Issue 10, (2002)
- 作者机构：
  
  1. 南京大学固体微结构物理国家重点实验室南京大学物理系
  2. 中国科学院高能物理研究所,南京,210093
  3. ,北京,100039
- 作者简介：
- 基金信息：
  
  国家重点基础研究专项 (G2 0 0 0 0 6 83);国家自然科学基金 (6 0 136 0 2 0、6 9976 0 14等 );国家高科技 (86 3)发展计划资助
- DOI：
  CLC： TN304
- Published：01 October 2002
- 稿件说明：
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[1]谭伟石,沙昊,沈波,蔡宏灵,吴小山,蒋树声,郑文莉,贾全杰,姜晓明.调制掺杂Al_xGa_(1-x)N/GaN异质结构的微应变[J].核技术,2002(10):799-804.

TAN Weishi SHA Hao SHEN Bo CAI Hongling WU Xiaoshan JIANG Shusheng. Microstrain in modulation-doped Al_xGa_1-x N/GaN heterostructures[J]. Nuclear techniques, 2002, (10): 799-804.
[1]谭伟石,沙昊,沈波,蔡宏灵,吴小山,蒋树声,郑文莉,贾全杰,姜晓明.调制掺杂Al_xGa_(1-x)N/GaN异质结构的微应变[J].核技术,2002(10):799-804. DOI：

TAN Weishi SHA Hao SHEN Bo CAI Hongling WU Xiaoshan JIANG Shusheng. Microstrain in modulation-doped Al_xGa_1-x N/GaN heterostructures[J]. Nuclear techniques, 2002, (10): 799-804. DOI：

摘要

用MOCVD方法在（0 0 0 1）取向的蓝宝石（α -Al2 O3）衬底上生长了不同势垒层厚度的Al0 .2 2Ga0 .78N/GaN异质结构

利用高分辨X射线衍射（HRXRD）测量了其对称反射（0 0 0 2 ）和非对称反射（10 14 ）的倒易空间图（RSM ）。分析结果表明

势垒层内部微结构与应变状态和下层i -GaN的微结构与应变状态互相关联

当厚度大于 75 0 时

势垒层开始发生应变弛豫

临界厚度大于5 0 0 。势垒层具有一种“非常规”应变弛豫状态

这种状态的来源可能与n -AlGaN的内部缺陷以及i-GaN/α -Al2 O3界面应变弛豫状态有关

Abstract

Modulation-doped Al x Ga 1- x N/GaN heterostructures with various thickness of Si-doped n-Al 0.22 Ga 0.78 N barrier (n-AlGaN) were deposited on (0001)-oriented sapphire (α-Al 2O 3) by MOCVD. The reciprocal space mappings (RSMs) of symmetric reflection (0002) and asymmetric reflection (1014) were measured with the methods of high resolution X-ray diffraction (HRXRD). The results indicate that the microstructure and strain status of barrier correlate to those of the i-GaN layer. The strained barrier starts to be relaxed while its thickness is larger than 750 and the critical thickness t c is larger than 500. The barrier holds an "abnormal" relaxation status

which probably results from the internal defects of n-AlGaN and the strain relaxation status at the i-GaN/α-Al 2O 3 interfaces.

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Related Author

李晓龙

贾全杰

WANG Haiou1 LIU Hao1 Dai Ping1 TAN Weishi1 WU Xiaoshan2 JIA Quanjie3 LI Xiaolong4 1

刘昊

戴萍

谭伟石

吴小山

ZHU Zhiyong

Related Institution

Key Laboratory of Soft Chemistry and Functional Materials,Ministry of Education,Department of Applied Physics,Nanjing University of Science and Technology,Nanjing 210094,China) 2

南京大学固体微结构物理国家重点实验室南京大学物理系

中国科学院上海应用物理研究所

University of Chinese Academy of Sciences

Shanghai Institute of Applied Physics, Chinese Academy of Sciences

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Microstrain in modulation-doped AlxGa1-x N/GaN heterostructures

DOI：

摘要

Abstract

关键词

Keywords

references

Microstrain in modulation-doped Al_xGa_1-x N/GaN heterostructures