Effects of nitrogen element on total-dose irradiation response of high-k Hf-based dielectric films

SONG Zhaorui 1 CHENG Xinhong2 ZHANG Enxia 1 XING Yumei 1 YU Yuehui 1 ZHENG Zhihong 1 SHEN Qinwo 1 ZHANG Zhengxuan 1 WANG Xi 1 1

doi:null

您当前的位置：

首页 >

文章列表页 >

Effects of nitrogen element on total-dose irradiation response of high-k Hf-based dielectric films

更新时间：2021-03-12

- Effects of nitrogen element on total-dose irradiation response of high-k Hf-based dielectric films
- NUCLEAR TECHNIQUES Issue 8, (2007)
- 作者机构：
  
  1. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室
  2. 温州大学物理系
- 作者简介：
- 基金信息：
  
  国家自然科学基金(50402026)资助
- DOI：
  CLC： V520
- Published：01 August 2007
- 稿件说明：
移动端阅览
[1]宋朝瑞,程新红,张恩霞,邢玉梅,俞跃辉,郑志宏,沈勤我,张正选,王曦.氮元素对高k铪基介电薄膜总剂量抗辐射性能的影响研究[J].核技术,2007(08):675-678.

SONG Zhaorui 1 CHENG Xinhong2 ZHANG Enxia 1 XING Yumei 1 YU Yuehui 1 ZHENG Zhihong 1 SHEN Qinwo 1 ZHANG Zhengxuan 1 WANG Xi 1 1. Effects of nitrogen element on total-dose irradiation response of high-k Hf-based dielectric films[J]. Nuclear techniques, 2007, (8): 675-678.
[1]宋朝瑞,程新红,张恩霞,邢玉梅,俞跃辉,郑志宏,沈勤我,张正选,王曦.氮元素对高k铪基介电薄膜总剂量抗辐射性能的影响研究[J].核技术,2007(08):675-678. DOI：

SONG Zhaorui 1 CHENG Xinhong2 ZHANG Enxia 1 XING Yumei 1 YU Yuehui 1 ZHENG Zhihong 1 SHEN Qinwo 1 ZHANG Zhengxuan 1 WANG Xi 1 1. Effects of nitrogen element on total-dose irradiation response of high-k Hf-based dielectric films[J]. Nuclear techniques, 2007, (8): 675-678. DOI：

摘要

本文采用MIS电容结构

结合10keVX射线辐照试验

研究了HfON和HfO2介电薄膜的总剂量抗辐射性能。研究结果表明

在0—30kGy（Si）的辐照总剂量下

以HfON薄膜为绝缘层的MIS结构的平带电压漂移均远低于HfO2MIS电容结构。从微观角度探讨了氮元素对改进高k铪基介电薄膜总剂量抗辐射性能的作用机理。

Abstract

Total-dose irradiation responses of HfON and HfO2 dielectric films were studied with their MIS structures and under 10keV X-rays. The flatband voltage shifts of HfON MIS structures are much smaller than HfO2 MIS structures under different total-doses up to 30 kGy(Si). The influence of the added nitrogen element on total-dose irradiation tolerance of Hf-based dielectric films was also discussed.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：881163 Visits Today：690

⁰