Radiation effects of 1 MeV electron on a home-made type of tripie-junction GaInP/GaAs/Ge solar cell have been investigated.The results indicate that the GalnP/GaAs/Ge solar cell has high efficiency and high radiation hardness.The final-to-initial maximum power ratio (P/P0) of the GaInP/GaAs/Ge cell was 80.4% at a fluence of l×l0(15)cm(-2).The spectral response of the GalnP top subcell showed little degradation
and this was not a limitation for GalnP/GaAsd/Ge cell performance.The GaAs middle subcell I(sc)
however
presented serious degradation.The degradation of GalnP/GaAs/Ge solar cell is due primarily to the GaAs middle subcell.