Diamond-like-carbon films and graphite samples were implanted at room temperature(RT) using 100—120 keV N-ions to 5 × 1017 - 5 × 1018 cm-2

and then irradiated at RT using 345 MeV Xe

2.64 GeV U or 30 MeV C60 ions

respectively. The irradiated samples were characterized by FTIR

Raman

and XRD or XPS spectroscopes

and the formation of new chemical bonds and phases in the N-doped samples induced by heavy ion irradiations were studied. It was found that high-energy heavy ion irradiations could significantly induce the formation of CN bonds in all samples

high N-concentration and intense energy deposition result in the increment of sp3/sp2 bonding ratio and the enhancement of the formation of N-sp3C bonds that are needed for α-and β-C3N4 phase production. Furthermore

C60 ion irradiation could result in the formation of CNx and tetrahedral amorphous carbon in the C-doped graphite samples

whereas high-energy Xe and U ions could produce α-and β-C3N4 crystalline inclusions in the C-doped diamond-like-carbon samples.