A study of damage accumulation in GaN single crystals induced by slow highly-charged heavy ions

YANG Yitao1; 2 ZHANG Chonghong1 SUN Youmei1 YAO Cunfeng1; 2 ZHAO Zhiming1 1

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A study of damage accumulation in GaN single crystals induced by slow highly-charged heavy ions

更新时间：2021-03-12

- A study of damage accumulation in GaN single crystals induced by slow highly-charged heavy ions
- NUCLEAR TECHNIQUES Issue 4, (2007)
- 作者机构：
  
  1. 中国科学院近代物理研究所
  2. 中国科学院研究生院北京,100080
  3. 中国科学院近代物理研究所,兰州,730000
- 作者简介：
- 基金信息：
  
  中国科学院“西部之光”人才培养计划、近代物理研究所所长基金;北京大学重离子物理重点实验室资助的项目
- DOI：
  CLC： O571.6
- Published：01 April 2007
- 稿件说明：
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[1]杨义涛,张崇宏,孙友梅,姚存峰,赵志明.低速高电荷态重离子在GaN单晶中引起的辐照损伤研究[J].核技术,2007(04):318-322.

YANG Yitao1, 2 ZHANG Chonghong1 SUN Youmei1 YAO Cunfeng1, 2 ZHAO Zhiming1 1. A study of damage accumulation in GaN single crystals induced by slow highly-charged heavy ions[J]. Nuclear techniques, 2007, (4): 318-322.
[1]杨义涛,张崇宏,孙友梅,姚存峰,赵志明.低速高电荷态重离子在GaN单晶中引起的辐照损伤研究[J].核技术,2007(04):318-322. DOI：

YANG Yitao1, 2 ZHANG Chonghong1 SUN Youmei1 YAO Cunfeng1, 2 ZHAO Zhiming1 1. A study of damage accumulation in GaN single crystals induced by slow highly-charged heavy ions[J]. Nuclear techniques, 2007, (4): 318-322. DOI：

摘要

利用Rutherford沟道背散射分析研究了低速高电荷态重离子（Xe26+）在氮化镓（GaN）晶体中辐照损伤的产生对剂量的依赖关系

比较了垂直照射和60o倾斜照射的差异。基于“库仑爆炸”模型对结果进行了解释。

Abstract

Damage induced in the lattice of GaN epi-layers by the bombardment with slow highly-charged heavy ions(SHCI) of Xe26 + extracted from an ECR ion source was measured by RBS/C technique. Behavior of damage accumulation in two geometries(along the normal incidence and the incidence along 60° from specimen’s normal) as a function of ion fluence was studied. The results were discussed in light of the “Coulomb explosion” model.

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