FTIR and Raman spectra of ion irradiated and annealed 4H-SiC

ZHOU Lihong1; 2 ZHANG Chonghong1 YANG Yitao1; 2 SONG Yin1 YAO Cunfeng1; 2 1

doi:null

您当前的位置：

首页 >

文章列表页 >

FTIR and Raman spectra of ion irradiated and annealed 4H-SiC

更新时间：2021-03-12

- FTIR and Raman spectra of ion irradiated and annealed 4H-SiC
- NUCLEAR TECHNIQUES Issue 4, (2007)
- 作者机构：
  
  1. 中国科学院近代物理研究所
  2. 中国科学院研究生院北京,100049
  3. 中国科学院研究生院北京100049,兰州,730000
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(批准号10575124);中国科学院“西部之光”人才培养计划资助的项目
- DOI：
  CLC： O433
- Published：01 April 2007
- 稿件说明：
移动端阅览
[1]周丽宏,张崇宏,杨义涛,宋银,姚存峰.离子辐照后4H-SiC晶体退火前后的光谱研究[J].核技术,2007(04):314-317.

ZHOU Lihong1, 2 ZHANG Chonghong1 YANG Yitao1, 2 SONG Yin1 YAO Cunfeng1, et al. FTIR and Raman spectra of ion irradiated and annealed 4H-SiC[J]. Nuclear techniques, 2007, (4): 314-317.
[1]周丽宏,张崇宏,杨义涛,宋银,姚存峰.离子辐照后4H-SiC晶体退火前后的光谱研究[J].核技术,2007(04):314-317. DOI：

ZHOU Lihong1, 2 ZHANG Chonghong1 YANG Yitao1, 2 SONG Yin1 YAO Cunfeng1, et al. FTIR and Raman spectra of ion irradiated and annealed 4H-SiC[J]. Nuclear techniques, 2007, (4): 314-317. DOI：

摘要

分析了高能Pb27+辐照预注入12C+的和未预注入12C+ 4H-SiC样品在

退火前后傅立叶变换红外光谱和拉曼散射光谱的变化。从傅立叶变换红外光谱可以知道

900℃以上的退火使损伤层发生显著恢复;在拉曼散射光谱中可以看到1200℃退火后有石墨相的存在。实验结果说明

高温退火有利于损伤的恢复

使注入到碳化硅中的碳原子发生聚集并引起相变。

Abstract

The 4H-SiC specimens were implanted with 110keV C-ions and then irradiated with 230MeV Pb-ions and subsequently annealed at different temperatures in vacuum. The samples were investigated after each annealing stage by using FTIR and Raman spectroscopy. The obtained FTIR spectra showed several interference fringes in the range from 960 cm-1 to 1450 cm-1. The intensity of fringes decreases with the increase of annealing temperature

and an abrupt decrease of the fringe intensity was found for annealing above 900oC

indicating that there was a significant recovery of the irradiation-induced damage in the crystal for annealing at high temperatures. The Raman spectroscopy showed that after annealing at 1200 ℃ for 30 min the amorphous layer was recovered and the precipitation of carbon atoms in graphite occurred.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effects of γ -ray irradiation and annealing on characteristics of F~+ implanted NMOSFET

Electron-beam irradiation technology for decreasing the h_FE value of transistors

A dual-purpose machine of ion implantation and ion beam mixing

Slow positron beam study on defects induced by Xe ions irridiation in matrix graphite of fuel elements

Feasibility study of fast neutron yield measurement with 4H-SiC detector

Related Author

CUI Shuai YU Xuefeng REN Diyuan ZHANG Hualin

余学峰

任迪远

张华林

王中央

陈祖良

刘亚建

章月红

Related Institution

Xinjiang Institute of Physics and Chemistry

新疆理化技术研究所

Institute of Applied Technical Physics of Zhe jiang Province, Hangzhou 310012)Yin Nanyong

浙江省广播电视工业公司

浙江省技术物理应用研究所浙江省广播电视工业公司

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：881139 Visits Today：666

⁰