Thermally grown amorphous SiO2 films on single crystalline silicon were implanted at room temperature(RT) with 120keV C ions to 2.0 × 1017～8.6 × 1017 cm-2

then irradiated at RT by high energy Xe

U and Pb ions to 1.0 × 1010 ～ 3.8 × 1012 cm-2. The variation of chemical bonding configuration in these samples induced by high energy ion bombardments was investigated using Fourier Transformation Infrared(FTIR) spectroscopy. The obtained results showed that a large amount of Si-O-C and Si-C bonds was formed in the heavy ion irradiated C-doped amorphous SiO2 films. The SiOC bonds are of cage-

ring-or open-linked structures

and the cage-linked structure tends to ring-/open-linked structure with the increase of heavy ion irradiation fluence

electronic energy loss

or deposited energy density in the samples. The mechanism of SiOC formation induced by high energy heavy ion irradiations was briefly discussed.