Antibacterial and corrosion resistance of TiN/Ag multilayers by ion beam assisted deposition

CAI Xuemin LIU Tong TANG Huiqing ZHANG Kui ZHAO Jie

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Antibacterial and corrosion resistance of TiN/Ag multilayers by ion beam assisted deposition

更新时间：2021-03-12

- Antibacterial and corrosion resistance of TiN/Ag multilayers by ion beam assisted deposition
- NUCLEAR TECHNIQUES Issue 12, (2007)
- 作者机构：
  
  1. 天津师范大学物理与电子信息学院
  2. 天津师范大学物理与电子信息学院,天津,300387
- 作者简介：
- 基金信息：
  
  国家自然基金资助项目(10475061);天津市自然基金(033607911)资助
- DOI：
  CLC： R318.08
- Published：01 December 2007
- 稿件说明：
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[1]才学敏,刘桐,唐慧琴,张魁,赵杰.离子束辅助沉积TiN／Ag多层膜的抗菌性和抗腐蚀性[J].核技术,2007(12):1028-1032.

CAI Xuemin LIU Tong TANG Huiqing ZHANG Kui ZHAO Jie. Antibacterial and corrosion resistance of TiN/Ag multilayers by ion beam assisted deposition[J]. Nuclear techniques, 2007, (12): 1028-1032.
[1]才学敏,刘桐,唐慧琴,张魁,赵杰.离子束辅助沉积TiN／Ag多层膜的抗菌性和抗腐蚀性[J].核技术,2007(12):1028-1032. DOI：

CAI Xuemin LIU Tong TANG Huiqing ZHANG Kui ZHAO Jie. Antibacterial and corrosion resistance of TiN/Ag multilayers by ion beam assisted deposition[J]. Nuclear techniques, 2007, (12): 1028-1032. DOI：

摘要

用离子束辅助沉积（IBAD）方法在医用不锈钢317L上制备TiN/Ag多层膜。用琼脂平板法测试了样品的抗菌率

测试菌种为革兰氏阴性大肠杆菌（E.coil）和革兰氏阳性金黄色葡萄球菌（S.aureus）;用电化学腐蚀的方法检测了薄膜在Hank’s模拟体液中的耐腐蚀性能;通过X射线光电子能谱（XPS）、X射线衍射（XRD）和俄歇电子能谱（AES）分析研究了薄膜的结构特征和各元素的深度分布。研究结果表明:当多层膜TiN/Ag的调制周期为8 nm时（5 nm TiN+3 nm Ag）

表现出很强的抗菌性

抗菌率达到99%以上;而且抗腐蚀性能比医用不锈钢317L有所提高

接近单层TiN薄膜。

Abstract

TiN/Ag multilayers were deposited on medical stainless steel 317L by ion beam assisted deposition (IBAD). Standard agar dilution method was used to test antibacterial ratio using E.coil and S.aureus. Electro-chemical method was used to test corrosion resistance of the film in Hank’s simulated human plasma. The structure and depth profile of the elements were investigated by XPS

XRD and AES. The results show that a strong antibacterial ratio (>99%) can be obtained when the modulation period of TiN/Ag multilayers is 8 nm (5 nm TiN and 3 nm Ag). Its corrosion resistance is better than medical stainless steel 317L

approaching monolayer TiN.

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