Microstructure of GaAs/AlAs/GaAs with and without oxidation

WANG Yong  JIA Haiqiang  WANG Wenchong  LIU Cuixiu    CHEN Xiangming  MAI Zhenhong

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Microstructure of GaAs/AlAs/GaAs with and without oxidation

更新时间：2021-03-12

- Microstructure of GaAs/AlAs/GaAs with and without oxidation
- NUCLEAR TECHNIQUES Issue 10, (2002)
- 作者机构：
  
  1. 中国科学院物理研究所凝聚态物理中心
  2. 中国科学院高能物理研究所,北京,100080
  3. ,北京,100039
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：01 October 2002
- 稿件说明：
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[1]王勇,贾海强,王文充,刘翠秀,陈向明,麦振洪,郑文莉,贾全杰,姜晓明.GaAs/AlAs/GaAs氧化前后的微结构表征[J].核技术,2002(10):775-778.

WANG Yong JIA Haiqiang WANG Wenchong LIU Cuixiu CHEN Xiangming MAI Zhenhong. Microstructure of GaAs/AlAs/GaAs with and without oxidation[J]. Nuclear techniques, 2002, (10): 775-778.
[1]王勇,贾海强,王文充,刘翠秀,陈向明,麦振洪,郑文莉,贾全杰,姜晓明.GaAs/AlAs/GaAs氧化前后的微结构表征[J].核技术,2002(10):775-778. DOI：

WANG Yong JIA Haiqiang WANG Wenchong LIU Cuixiu CHEN Xiangming MAI Zhenhong. Microstructure of GaAs/AlAs/GaAs with and without oxidation[J]. Nuclear techniques, 2002, (10): 775-778. DOI：

摘要

研究了GaAs/AlAs/GaAs三层膜氧化前后成分和微结构的变化。对GaAs/AlAs/GaAs利用横向氧化的方式得到了GaAs/Al2 O3/GaAs薄膜

利用X射线小角反射和高角衍射技术进行了微结构表征。结果表明

氧化前GaAs/AlAs/GaAs结构中

AlAs层与表面GaAs之间存在着一层110 的均匀过渡层。AlAs层分成厚度为 4 0 和 10 5 0 的两层

而 4 0 厚的AlAs层的平均原子密度比 10 5 0 厚的减小。利用横向氧化的方式使得AlAs完全氧化为Al2 O3

而且与氧化前相比

其过渡层的厚度与粗糙度均减小。

Abstract

The Changes of compositions and microstructures of GaAs/AlAS/GaAs trilayers before and after oxidation were investigated. GaAs/Al 2O 3/GaAs thin film was obtained from GaAs/AlAs/GaAs by lateral oxidation and its microstructures were investigated by use of X-ray small angle reflectivity and high angle diffraction. The results show that before oxidation there exists an even transition layer with the thickness of 110 between the AlAs layer and the upper GaAs layer. The AlAs layer was separated into two layers

one is of 40 thickness and the other 1050. The average atomic density of the thin AlAs layer is less than that of the thick AlAs layer. After lateral oxidation

AlAs was oxidized into Al 2O 3

and the thickness and roughness of the transition layer metioned above decrease.

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