Development of a multi-sample high intensity sputter negative ion source for AMS

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Development of a multi-sample high intensity sputter negative ion source for AMS

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- Development of a multi-sample high intensity sputter negative ion source for AMS
- NUCLEAR TECHNIQUES Issue S1, (2001)
- 作者机构：
  
  中国科学院上海原子核研究所,上海,201800
- 作者简介：
- 基金信息：
  
  国家自然科学基金委员会资助项目
- DOI：
  CLC： TL817.4
- Published：01 January 2001
- 稿件说明：
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[1]斯厚智.超灵敏小型回旋加速器质谱计的Cs溅射负离子源的研制和性能[J].核技术,2001(S1):244-249.

Development of a multi-sample high intensity sputter negative ion source for AMS[J]. Nuclear techniques, 2001, (S1): 244-249.
[1]斯厚智.超灵敏小型回旋加速器质谱计的Cs溅射负离子源的研制和性能[J].核技术,2001(S1):244-249. DOI：

Development of a multi-sample high intensity sputter negative ion source for AMS[J]. Nuclear techniques, 2001, (S1): 244-249. DOI：

摘要

一台用于超灵敏质谱（AMS）的带有多靶机构的强流溅射负离子源己经研制完成

为了满足AMS的特殊要求

源的设计着重解决提高流强、降低记忆效应及改善发射度等方面的问题

并且十分注意性能的可靠性与稳定性。样机在试验台架上进行了一年多的调试并进一步作了改进

迄今已引出了10μA Be0、5μA Al、4.5μA Fe、350μA C-以及其他十余个离子品种

100μA以下测得的归一化发射度为（2-4）πmm.mrad.MeV1/2

对记忆效应与电离效率也进行了初步测定。

Abstract

The development of a high intensity Cs sputter negative ion source with multi-sample mechanism for AMS applications has been completed. In order to meet the particular requirements of AMS the source was specially designed with the emphasis on high output

low memory effect

low emittance as well as reliability and stability in structure and performance. The source prototype has been tested intensively on the test stand for more than one year. During the period some important modifications were made. 10μA Be0-

5/μA Al-

4. 5μA Fe-

350μA C- etc. have been delivered. The emittance was measured to be very good and ranges from 2 to 4πmm

mrad. MeV1/2 for beams less than 100μA The memory effect and ioniza-tion efficiency have also been measured or evaluated. The first two source prototypes will be moved to the EN tandem at Peking University

Beijing

and the 6 MV home-made tandem in Sanghai Institute of Nadoar Research for 14C and 10Be measurements respectively.

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