R&amp;D of Si PIN diode and its performance test

LI Chengbo1 YUAN Jian1 MENG Qiuying1 ZHOU Shuhua1 ZHANG Lu2 ZHANG Taiping2 NING Baojun2 TIAN Dayu2 1

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R&D of Si PIN diode and its performance test

更新时间：2021-03-12

- R&D of Si PIN diode and its performance test
- NUCLEAR TECHNIQUES Issue 4, (2006)
- 作者机构：
  
  1. 中国原子能科学研究院
  2. 北京大学微电子研究所
  4. ,北京,100871
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(00121140488)
- DOI：
  CLC： TL81
- Published：01 April 2006
- 稿件说明：
移动端阅览
[1]李成波,袁坚,孟秋英,周书华,张录,张太平,宁宝俊,田大宇.平面型硅光电二极管PIN的研制及其基本性能测试[J].核技术,2006(04):305-308.

LI Chengbo1 YUAN Jian1 MENG Qiuying1 ZHOU Shuhua1 ZHANG Lu2 ZHANG Taiping2 NING Baojun2 TIAN Dayu2 1. R&D of Si PIN diode and its performance test[J]. Nuclear techniques, 2006, (4): 305-308.
[1]李成波,袁坚,孟秋英,周书华,张录,张太平,宁宝俊,田大宇.平面型硅光电二极管PIN的研制及其基本性能测试[J].核技术,2006(04):305-308. DOI：

LI Chengbo1 YUAN Jian1 MENG Qiuying1 ZHOU Shuhua1 ZHANG Lu2 ZHANG Taiping2 NING Baojun2 TIAN Dayu2 1. R&D of Si PIN diode and its performance test[J]. Nuclear techniques, 2006, (4): 305-308. DOI：

摘要

为满足CERN/ALICE超高能重离子对撞实验光子谱仪的需要

首次采用高阻硅材料

并利用一些特殊工艺

研制了用于钨酸铅晶体探测器读出单元的硅光电二极管PIN。PIN的灵敏区面积为16mm×17mm

常温漏电流小于5nA

紫光区量子效率82%

全耗尽结电容为110—120pF。由PIN与电荷灵敏前置放大器组成的读出系统的噪声水平

在-25℃下小于600个等效噪声电荷

并经过了长期性能稳定性的考验。开发研制的大面积PIN硅光管全面达到ALICE/PHOS国际招标所规定PIN硅光管性能的指标。

Abstract

The silicon PIN photodiode is an important part of the PbWO4 detector read-out system that will be used in the Photon Spectrometer (PHOS) in the CERN/ALICE experiment. High specific resistivity n-type silicon material is used for the first time in our R&D of PIN

and special techniques are employed in the production process to ensure low dark current

high quantum efficiency

and low noise. The PIN diode has a sensitive area of 16 mm×17 mm. The leak current is lower than 5 nA at room temperature

the quantum efficiency in the wavelength range of 400—500 nm is about 82%

and the junction capacity is about 110—120 pF. The noise level (ENC) of PIN+PreAmp system is lower than 600 e at –25℃. The PIN diodes have passed the long-term stability test. The performance of our R&D PIN photo-diodes has overall met the ALICE/PHOS requirement.

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R&D of Si PIN diode and its performance test

DOI：

摘要

Abstract

关键词

Keywords

references