Observation on plasmons in double interfaces of Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub>/Si irradiated by <sup>60</sup>Co

您当前的位置：

首页 >

文章列表页 >

Observation on plasmons in double interfaces of Si₃N₄/SiO₂/Si irradiated by ⁶⁰Co

更新时间：2021-03-12

|

- Observation on plasmons in double interfaces of Si₃N₄/SiO₂/Si irradiated by ⁶⁰Co
- NUCLEAR TECHNIQUES Issue 7, (2006)
- 作者机构：
  
  绍兴文理学院物理系,绍兴,312000
- 作者简介：
- 基金信息：
  
  国家自然科学基金(No.60276025)项目;绍兴文理学院科学基金资助
- DOI：
  CLC： TN304
- Published：01 July 2006
- 稿件说明：
移动端阅览
[1]刘昶时.电离辐射下双界面Si_3N_4/SiO_2/Si的等离激元[J].核技术,2006(07):485-488.

LIU Changshi. Observation on plasmons in double interfaces of Si₃N₄/SiO₂/Si irradiated by ⁶⁰Co[J]. Nuclear techniques, 2006, (7): 485-488.
[1]刘昶时.电离辐射下双界面Si_3N_4/SiO_2/Si的等离激元[J].核技术,2006(07):485-488. DOI：

LIU Changshi. Observation on plasmons in double interfaces of Si₃N₄/SiO₂/Si irradiated by ⁶⁰Co[J]. Nuclear techniques, 2006, (7): 485-488. DOI：

摘要

用X光激发电子能谱（XPS）分析技术对Si3N4/SiO2/Si双界面系统经Co电离辐照前后处于纯Si态的60一级等离激元（定位于B.E.116.95eV）、处于SiO2态的一级等离激元（定位于B.E.122.0eV）和处于Si3N4态的一级等离激元（定位于B.E.127.0eV）进行了研究。实验结果显示:存在一个由Si3N4态等离激元和SiO2态等离激元构成的界面及由SiO2态等离激元和Si态等离激元构成的界面

在电离辐射的作用下

SiO2态-Si3N4态等离激元界面区中心向Si3N4态表面方向推移

同时SiO2态/Si3N4态等离激元界面区亦被展宽;电离辐照相当程度地减少位于SiO2态-Si态界面至Si衬底之间SiO2态的一级等离激元的浓度:同时偏置电场对SiO2/Si界面等离激元有显著作用。文中就实验现象以光电子能损进行了机制分析。

Abstract

The first level plasmons of Si in pure Si state

SiO2 state and Si3N4 state (corresponding to bonding energy of 116.95

122.0 and 127.0 eV respectively) were investigated directly with X-ray Photoelectron Spectroscopy (XPS) before and after Co irradiation. The experimental results demonstrate that there exist two interfaces

one consists of 60 plasmons of Si in Si3N4 state and in SiO2 state

while the other is made of plasmons of Si in pure Si state and in SiO2 state. When the Si3N4/SiO2/Si samples were irradiated by Co

the interface at Si3N4/SiO2 was extended and at the 60 same time the center of this interface moved towards the surface of Si3N4. The concentration of plasmons in SiO2 state was decreased at the SiO2/Si interface

and effects of radiation bias field on plasmons in the SiO2/Si interface were observable. Finally

the mechanism of experimental results is analyzed by the quantum effect of plasmons excited by photoelectrons.

关键词

Keywords

references

0

Views

24

下载量

0

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Related Articles

Monte Carlo simulation of the influence of medical foam on particle dose

Monte Carlo computation in the applied research of nuclear technology

Development and application of apparatus for canning dosimeter solution

Study of CaF₂:Mn thermoluminescent properties

Stray radiation dose level in therapy room of medical electron linear accelerator

Related Author

ZHANG Qingxian

XIAO Yang

刘保杰

XU Shuyan1 LIU Baojie1 LI Qin2 1

李莉莉

季萍

杨萍

王超

Related Institution

The Second Affiliated Hospital of Chongqing Medical University

Chengdu University of Technology

China Institute of Atomic Energy,Beijing,102413,China) 2

中国原子能科学研究院

Institute of Atomic Energy, Jiangsu Academy of Agricultural Sciences

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：881139 Visits Today：666

⁰