Research on the method of enhancing radiation damage of JFET-input operational amplifiers

GAO Song LU Wu REN Diyuan NIU Zhenhong LIU Gang

doi:null

您当前的位置：

首页 >

文章列表页 >

Research on the method of enhancing radiation damage of JFET-input operational amplifiers

更新时间：2021-03-12

- Research on the method of enhancing radiation damage of JFET-input operational amplifiers
- NUCLEAR TECHNIQUES Issue 8, (2006)
- 作者机构：
  
  1. 中国科学院新疆理化技术研究所
  2. 中国科学院新疆理化技术研究所乌鲁木齐 830011 中国科学院研究生院,北京,100049
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722.77;TN386
- Published：01 August 2006
- 稿件说明：
移动端阅览
[1]高嵩,陆妩,任迪远,牛振红,刘刚.JFET输入运算放大器的增强辐射损伤方法研究[J].核技术,2006(08):627-630.

GAO Song LU Wu REN Diyuan NIU Zhenhong LIU Gang. Research on the method of enhancing radiation damage of JFET-input operational amplifiers[J]. Nuclear techniques, 2006, (8): 627-630.
[1]高嵩,陆妩,任迪远,牛振红,刘刚.JFET输入运算放大器的增强辐射损伤方法研究[J].核技术,2006(08):627-630. DOI：

GAO Song LU Wu REN Diyuan NIU Zhenhong LIU Gang. Research on the method of enhancing radiation damage of JFET-input operational amplifiers[J]. Nuclear techniques, 2006, (8): 627-630. DOI：

摘要

本文对结型场效应管JFET输入运算放大器的增强辐射损伤方法进行了研究。结果表明

采用循环辐照—退火的方法可以使JFET输入运算放大器的辐射损伤增强

并且通过调整辐照剂量率、退火温度及时间等参数

可以评测出器件的低剂量率辐射损伤情况。文章还对这种辐射损伤方法的机理进行了分析。

Abstract

A method of enhancing radiation damage for JFET-input op-amps has been studied in this paper. The results show that a circulative irradiation-annealing method can make the radiation damage of JFET-input op-amps enhanced

and radiation damage of the devices at low dose rate can be evaluated through adjusting parameters such as radiating dose rate

annealing temperature and time

etc. The possible mechanism of this method is discussed.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Failure of low dose rate for systems and accelerated simulating test methods

A measurement System to detect the radiation damage inside CMOS operational amplifier

Establishment of low-dose rate X-ray radiation quality and calibration of the instruments

Design of charge sensitive preamplifier based on RC low pass feedback

Chip-based efficient data collection technology from multiple crystals

Related Author

CHEN Panxun

GUO Qi

LU Wu

REN Diyuan

YU Xuefeng

ZHANG Guoqiang FAN Long

YAN Rongliang

严荣良

Related Institution

Institute of Electronic Engineering, China Academy of Engineering Physics

Xinjiang Institute of Physics, The Chinese Academy of Sciences

中国科学院新疆

National Institute of Metrology

Chengdu University of Technology

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：881139 Visits Today：666

⁰