Study on adsorption and thermal oxidation of Zn on SiC surface by SR photoemission

XU Pengshou SUN Bai ZOU Chongwen WU Yuyu PAN Haibin XU Faqiang

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Study on adsorption and thermal oxidation of Zn on SiC surface by SR photoemission

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- Study on adsorption and thermal oxidation of Zn on SiC surface by SR photoemission
- NUCLEAR TECHNIQUES Issue 10, (2006)
- 作者机构：
  
  1. 中国科学技术大学国家同步辐射实验室
  2. 中国科学技术大学国家同步辐射实验室,合肥,230029
- 作者简介：
- 基金信息：
  
  高等学校博士学科点专项科研基金(20030358054);国家自然科学基金(50532070)资助
- DOI：
  CLC： O472.1
- Published：01 October 2006
- 稿件说明：
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[1]徐彭寿,孙柏,邹崇文,武煜宇,潘海斌,徐法强.碳化硅表面锌的吸附及其热氧化的同步辐射光电子能谱研究[J].核技术,2006(10):725-729.

XU Pengshou SUN Bai ZOU Chongwen WU Yuyu PAN Haibin XU Faqiang. Study on adsorption and thermal oxidation of Zn on SiC surface by SR photoemission[J]. Nuclear techniques, 2006, (10): 725-729.
[1]徐彭寿,孙柏,邹崇文,武煜宇,潘海斌,徐法强.碳化硅表面锌的吸附及其热氧化的同步辐射光电子能谱研究[J].核技术,2006(10):725-729. DOI：

XU Pengshou SUN Bai ZOU Chongwen WU Yuyu PAN Haibin XU Faqiang. Study on adsorption and thermal oxidation of Zn on SiC surface by SR photoemission[J]. Nuclear techniques, 2006, (10): 725-729. DOI：

摘要

利用同步辐射光电子能谱（Synchrotronradiationphotoelectronspectroscopy

SRPES）和X射线光电子能谱（X-rayphotoelectronspectroscopy

XPS）技术

研究了金属Zn在6H-SiC表面的吸附和热氧化以及ZnO/SiC的界面形成过程。研究结果表明

在SiC表面沉积金属Zn的初始阶段

Zn可以夺取SiC衬底表面残留的氧并与之成键。随着Zn覆盖度的增加

表面具有金属特性。在2.0×10-4Pa的氧气氛中180℃温度退火下

覆盖的Zn会被部分氧化形成ZnO

还有部分Zn因其在真空中的低蒸发温度而逸出表面。在同样的氧气氛中600℃温度退火后

覆盖的金属Zn全部被氧化而生成ZnO。在氧气氛中退火时

衬底也会轻度氧化

从而导致在ZnO/SiC界面处存在一层很薄的Si的氧化层。根据得到的光电子能谱的实验结果

计算出ZnO/SiC异质结的价带偏移为1.1eV。

Abstract

The adsorption and the thermal oxidation of Zn on 6H-SiC surface and the interface formation of ZnO/SiC have been investigated by using synchrotron radiation photoelectron spectroscopy (SRPES) and X-ray photoemission (XPS). The results show that at the initial stage of Zn adsorption

Zn can capture and bond with O remaining on the SiC surface. With increasing of Zn coverage

the surface exhibits metallic characterization. When the deposited Zn film is annealed at 180℃ in oxygen flux with the pressure of 2.0×10-4 Pa

it could be partly oxidized to form ZnO. Part of Zn atoms could escape from the surface due to its low evaporation temperature in UHV condition. While annealed at 600℃ in same oxygen flux

the total deposited Zn atoms could be oxidized to form ZnO. During annealing process

the substrate is also oxidized

which induces a thin layer of silicon oxide existing at the interface of ZnO/SiC. By using the results of SRPES and XPS

the valence band offset of ZnO/SiC is calculated to be 1.1 eV.

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