Statistical analysis of threshold voltage changes of CMOS devices before and after total dose irradiation

LI Aiwu1; 2 YU Xuefeng1 REN Diyuan1 WANG Dong1; 2 KUANG Zhibing1; 2 LIU Gang1; 2 1

doi:null

您当前的位置：

首页 >

文章列表页 >

Statistical analysis of threshold voltage changes of CMOS devices before and after total dose irradiation

更新时间：2021-03-12

- Statistical analysis of threshold voltage changes of CMOS devices before and after total dose irradiation
- NUCLEAR TECHNIQUES Issue 9, (2006)
- 作者机构：
  
  1. 中国科学院新疆理化技术研究所
  2. 中国科学院新疆理化技术研究所乌鲁木齐830011中国科学院研究生院北京,100049
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386
- Published：01 September 2006
- 稿件说明：
移动端阅览
[1]李爱武,余学峰,任迪远,汪东,匡治兵,刘刚.总剂量辐照前后CMOS器件阈电压变化的统计分析[J].核技术,2006(09):665-669.

LI Aiwu1, 2 YU Xuefeng1 REN Diyuan1 WANG Dong1, 2 KUANG Zhibing1, et al. Statistical analysis of threshold voltage changes of CMOS devices before and after total dose irradiation[J]. Nuclear techniques, 2006, (9): 665-669.
[1]李爱武,余学峰,任迪远,汪东,匡治兵,刘刚.总剂量辐照前后CMOS器件阈电压变化的统计分析[J].核技术,2006(09):665-669. DOI：

LI Aiwu1, 2 YU Xuefeng1 REN Diyuan1 WANG Dong1, 2 KUANG Zhibing1, et al. Statistical analysis of threshold voltage changes of CMOS devices before and after total dose irradiation[J]. Nuclear techniques, 2006, (9): 665-669. DOI：

摘要

本文采用统计分析的方法对大样本互补型金属-氧化物-半导体器件（CMOS）CC4069电路辐照前后的数据进行了处理。比较了研究变量的晶体管阈电压值在辐照前和累积一定辐照剂量后的标准差及统计分布

研究了样品阈电压漂移值的分布规律

由此对应用于航天系统的电子元器件进行有关辐射可靠性筛选的必要性进行了探讨。

Abstract

The statistical method has been applied to analyze the data of a large number samples of CMOS CC4069 circuits before and after irradiation. The standard deviation and statistical distribution of the threshold voltage of the transistors before and after irradiation were compared

and the distribution characteristics of the threshold voltage shift of the samples were studied. Furthermore

the necessity of selecting electronic devices

used in spaceflight systems to ensure their reliability

is discussed.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effects of γ -ray irradiation and annealing on characteristics of F~+ implanted NMOSFET

Long-term anneal of PMOS dosimeter at room temperature

Proton irradiation effects of fluorinated MOSFFTs

Total dose gamma ray irradiation characteristics of NMOS/SIMOX

Related Author

CUI Shuai YU Xuefeng REN Diyuan ZHANG Hualin

余学峰

任迪远

张华林

YAN Rongliang

ZHAN Guoqiang

YU Xuefeng

LU Wu

Related Institution

Xinjiang Institute of Physics and Chemistry

新疆理化技术研究所

Xinjiang Institute of Physics, The Chinese Academy of Sciences, Urumqi 830011) Zhao Yuanfu

航天工业总公司7

Xinjiang Institute of Physics,Acadsmia Sinica

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：881139 Visits Today：666

⁰