Thickness determination of silicon detector and calibration of CsI(Tl)

WEI Zhiyong  DUAN Limin  WU Heyu  JIN Genming  LI ZUyu  ZHANG Baoguo    WANG Hongwei  XIAO Zhigang  LIU Yongying  WANG Sufang  ZHU Yongtai  HU Rongjiang

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Thickness determination of silicon detector and calibration of CsI(Tl)

更新时间：2021-03-12

- Thickness determination of silicon detector and calibration of CsI(Tl)
- NUCLEAR TECHNIQUES Issue 6, (2001)
- 作者机构：
  
  1. 中国科学院近代物理研究所,兰州,730000
  2. 中
- 作者简介：
- 基金信息：
  
  国家自然科学基金! (195 0 5 0 0 7);中国科学院留学回国人员基金和中国科学院”九五”重大项目! (KJ95T - 0 3)
- DOI：
  CLC： TL814
- Published：01 June 2001
- 稿件说明：
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[1]魏志勇,段利敏,吴和宇,靳根明,李祖玉,张保国,王宏伟,肖志刚,柳永英,王素芳,诸永泰,胡荣江.半导体探测器的厚度确定及CsI(Tl)的刻度[J].核技术,2001(06):468-472.

WEI Zhiyong DUAN Limin WU Heyu JIN Genming LI ZUyu ZHANG Baoguo WANG Hongwei XIAO Zhigang LIU Yongying WANG Sufang ZHU Yongtai HU Rongjiang. Thickness determination of silicon detector and calibration of CsI(Tl)[J]. Nuclear techniques, 2001, (6): 468-472.
[1]魏志勇,段利敏,吴和宇,靳根明,李祖玉,张保国,王宏伟,肖志刚,柳永英,王素芳,诸永泰,胡荣江.半导体探测器的厚度确定及CsI(Tl)的刻度[J].核技术,2001(06):468-472. DOI：

WEI Zhiyong DUAN Limin WU Heyu JIN Genming LI ZUyu ZHANG Baoguo WANG Hongwei XIAO Zhigang LIU Yongying WANG Sufang ZHU Yongtai HU Rongjiang. Thickness determination of silicon detector and calibration of CsI(Tl)[J]. Nuclear techniques, 2001, (6): 468-472. DOI：

摘要

根据核反应过程中发射带电粒子在硅半导体中的最大能量沉积

利用带电粒子在硅半导体中的阻止本领曲线

同时实现半导体探测器的厚度确定及与之组合的CsI（Tl）的刻度

Abstract

A method to determine the thickness of the Si semiconductor detector and calibrate the CsI(Tl) was developed using the maximum energy loss of charged particles emitted in nuclear reactions and their stopping power in Si semiconductor.

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