Local structure of Ge nanocrystals embedded in SiO<sub>2</sub> studied by Fluorescence EXAFS technique

YAN Wensheng1 SUN Zhihu1 A.V. KOLOBOV2 WEI Shiqiang1 1

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Local structure of Ge nanocrystals embedded in SiO₂ studied by Fluorescence EXAFS technique

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- Local structure of Ge nanocrystals embedded in SiO₂ studied by Fluorescence EXAFS technique
- NUCLEAR TECHNIQUES Issue 9, (2006)
- 作者机构：
  
  1. 中国科学技术大学国家同步辐射实验室
  2. National Institute of Advanced Industrial Science and Technology(AIST),Tsukuba Central4,1-1-1 Higashi,Ibaraki305,Japan,8562
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10375059,10404023);2003年BSRF重点课题
- DOI：
  CLC： O481
- Published：01 September 2006
- 稿件说明：
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[1]闫文盛,孙治湖,A.V.Kolobov,韦世强.荧光EXAFS研究镶嵌在SiO_2中的Ge纳米晶的局域结构[J].核技术,2006(09):646-649.

YAN Wensheng1 SUN Zhihu1 A.V. KOLOBOV2 WEI Shiqiang1 1. Local structure of Ge nanocrystals embedded in SiO₂ studied by Fluorescence EXAFS technique[J]. Nuclear techniques, 2006, (9): 646-649.
[1]闫文盛,孙治湖,A.V.Kolobov,韦世强.荧光EXAFS研究镶嵌在SiO_2中的Ge纳米晶的局域结构[J].核技术,2006(09):646-649. DOI：

YAN Wensheng1 SUN Zhihu1 A.V. KOLOBOV2 WEI Shiqiang1 1. Local structure of Ge nanocrystals embedded in SiO₂ studied by Fluorescence EXAFS technique[J]. Nuclear techniques, 2006, (9): 646-649. DOI：

摘要

用荧光扩展X射线吸收精细结构（EXAFS）研究了磁控溅射法制备的镶嵌在SiO

中的Ge纳米晶的局域结构。结果表明

在Ge的摩尔分数为25%和60%的初始样品中

Ge原子主要是以非晶GeO

和Ge物相存在

其中在Ge的摩尔分数为25%的样品中

以GeO

物相为主。经1073K退火后

样品中生成了Ge纳米晶。在Ge的摩尔分数为25%的样品中

Ge纳米晶只是来源于初始样品中的非晶Ge

而在Ge的摩尔分数为60%的样品中Ge纳米晶除了来源于初始样品中的非晶Ge外还来自于部分GeO

。进一步分析表明在Ge的摩尔分数为60%的样品中

有摩尔分数为20%的GeO

与来自衬底的Si发生还原反应生成Ge纳米晶。

Abstract

The fluorescence extended X-ray absorption fine structure (EXAFS) technique was used to study the local structure of Ge nanocrystals embedded in SiO2 matrix

which were synthesized by the magnetron sputtering co-deposition. It is revealed that in the as-prepared samples

Ge atoms mainly exist in the form of amorphous phases of Ge and GeO2. The sample with Ge mole fraction of 25% is mainly composed of the GeO2 phase. Upon annealing at 1073 K

Ge nanocrystals are formed. In the sample of 25% Ge (mole fraction)

Ge nanocrystals come from amorphous Ge phase; while in the sample of 60% Ge (mole fraction)

Ge atoms come from both GeO2 and amorphous Ge phase. A further analysis of the sample containing 60% Ge (mole fraction) shows that about 20% GeO2 (mole fraction) is turned into Ge nanocrystals due to the reduction reaction with Si atoms coming from the substrate.

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Local structure of Ge nanocrystals embedded in SiO2 studied by Fluorescence EXAFS technique

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摘要

Abstract

关键词

Keywords

references

Local structure of Ge nanocrystals embedded in SiO₂ studied by Fluorescence EXAFS technique