Studies on blue band in photoluminescence spectra of n-GaN implanted by different ions:N,O,Ga,Mg and Si

ZHANG Xiaodong1 LI Gongping1 ZHANG Limin1 YOU Wei1 ZHANG Yu1 LIU Zhengmin1 LIN Dexu2 1

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Studies on blue band in photoluminescence spectra of n-GaN implanted by different ions:N,O,Ga,Mg and Si

更新时间：2021-03-12

- Studies on blue band in photoluminescence spectra of n-GaN implanted by different ions:N,O,Ga,Mg and Si
- NUCLEAR TECHNIQUES Issue 11, (2006)
- 作者机构：
  
  1. 兰州大学现代物理系
  2. 中国科学院高能物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Published：01 November 2006
- 稿件说明：
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[1]张小东,李公平,张利民,尤伟,张宇,刘正民,林德旭.N、O、Ga、Mg和Si离子注入n型GaN样品的光致发光谱中蓝光发射带的研究[J].核技术,2006(11):835-837.

ZHANG Xiaodong1 LI Gongping1 ZHANG Limin1 YOU Wei1 ZHANG Yu1 LIU Zhengmin1 LIN Dexu2 1. Studies on blue band in photoluminescence spectra of n-GaN implanted by different ions:N,O,Ga,Mg and Si[J]. Nuclear techniques, 2006, (11): 835-837.
[1]张小东,李公平,张利民,尤伟,张宇,刘正民,林德旭.N、O、Ga、Mg和Si离子注入n型GaN样品的光致发光谱中蓝光发射带的研究[J].核技术,2006(11):835-837. DOI：

ZHANG Xiaodong1 LI Gongping1 ZHANG Limin1 YOU Wei1 ZHANG Yu1 LIU Zhengmin1 LIN Dexu2 1. Studies on blue band in photoluminescence spectra of n-GaN implanted by different ions:N,O,Ga,Mg and Si[J]. Nuclear techniques, 2006, (11): 835-837. DOI：

摘要

采用光致发光手段研究了几种不同注入离子N、O、Mg、Si和Ga对n型GaN蓝光发射带的影响。其中离子的注入剂量分别为1013、1014、1015和1016cm-2

注入温度为室温。注入后的样品在900℃流动氮气环境下进行10min的热退火。通过对实验测得的光致发光谱的分析

给出了不同注入离子对n型GaN蓝光发射带的影响随注入剂量的变化关系以及该影响的相对强弱

进而确定蓝光发射起源于注入离子引入的间位缺陷。

Abstract

The n-type gallium nitride (GaN) films were implanted with oxygen

nitrogen

magnesium

silicon and gallium ions at room temperature to a dose range from 1013 to 1016 cm-2. All the implanted GaN samples were annealed at 900℃ for 10 min in a flowing nitrogen environment. The effects of the implanted ion species on the blue luminescence (BL) band of GaN material were investigated by the photoluminescence (PL) spectra taken at room temperature. And based on the experimental data

we can conclude that the BL band result from the transitions between the energy levels formed by the interstitial impurities in the band gap of GaN.

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Related Author

ZHANG Limin ZHANG Xiaodong LIU Zhengmin

张小东

刘正民

LI Hao

LIU Changlong

DU Jifu1

2 HUANG Ningkang2 1

LIU Chunbao1

Related Institution

School of Nuclear Science and Technology, Lanzhou University

School of Science, Tianjin University

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology

College of Nuclear technology,Chemistry and Biology,Hubei University of Science and technology,Xianning 437100,China) 2

四川大学原子核科学技术研究所

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