Low energy Ar~+ beam assisted deposition of Ag(111) films

JIANG Bingyao1 JIANG Jun1 FENG Tao1 REN Congxin1 ZHANG Zhengxuan1 LIU Xianghuai1         ZHENG Liping2 1

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Low energy Ar~+ beam assisted deposition of Ag(111) films

更新时间：2021-03-12

- Low energy Ar~+ beam assisted deposition of Ag(111) films
- NUCLEAR TECHNIQUES Issue 1, (2005)
- 作者机构：
  
  1. 中国科学院上海微系统与信息技术研究所半导体功能薄膜工程技术研究中心
  2. 中国科学院上海应用物理研究所,上海,200050
  3. ,上海,201800
- 作者简介：
- 基金信息：
- DOI：
  CLC： TB43
- Published：01 January 2005
- 稿件说明：
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[1]江炳尧,蒋军,冯涛,任琮欣,张正选,柳襄怀,郑里平.低能Ar离子束辅助沉积Ag(111)薄膜[J].核技术,2005(01):34-39.

JIANG Bingyao1 JIANG Jun1 FENG Tao1 REN Congxin1 ZHANG Zhengxuan1 LIU Xianghuai1 ZHENG Liping2 1. Low energy Ar~+ beam assisted deposition of Ag(111) films[J]. Nuclear techniques, 2005, (1): 34-39.
[1]江炳尧,蒋军,冯涛,任琮欣,张正选,柳襄怀,郑里平.低能Ar离子束辅助沉积Ag(111)薄膜[J].核技术,2005(01):34-39. DOI：

JIANG Bingyao1 JIANG Jun1 FENG Tao1 REN Congxin1 ZHANG Zhengxuan1 LIU Xianghuai1 ZHENG Liping2 1. Low energy Ar~+ beam assisted deposition of Ag(111) films[J]. Nuclear techniques, 2005, (1): 34-39. DOI：

摘要

采用低能Ar离子束辅助沉积方法

在Mo/Si（100）基底上制备Ag膜。实验发现

用Ar离子束溅射沉积的Ag膜呈（111）择优取向。若在溅射沉积Ag膜的同时

用能量为500eV的Ar离子束沿衬底法线方向对Ag膜进行辅助轰击

当离子/原子到达比为0.06时

Ag膜呈（111）择优取向;当离子/原子到达比增大到0.18时

Ag膜呈（111）和（100）混合晶向。若Ar离子的入射角为35.26°

离子/原子到达比为0.06时

Ag膜呈（111）择优取向;当离子/原子比增大到0.18时

Ag膜呈（111）和微弱的（100）混合晶向。若Ar离子的入射角为54.7°

离子/原子到达比为0.06时

沉积的Ag膜呈很强的（111）择优取向。

Abstract

Low energy ion beam assisted deposition (IBAD) was employed to prepare Ag films on Mo/Si(100) substrate. It was found that Ag films deposited by the sputtering method were with (111) preferred orientation. Ag films exhibited mixed (111) and (100) orientations if the growing films were bombarded by 500 eV Ar+ beam along normal direction with Ion/Atom arrival ratio of 0.18. Ag films exhibited highly preferred (111) orientation at incidence angle of 54.7o.

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