A positron annihilation study for InP(InGaAsP)/InP structure grown by Plasma assisted molecular beam epitaxy

BAI Renji ZHAO Jie

doi:null

您当前的位置：

首页 >

文章列表页 >

A positron annihilation study for InP(InGaAsP)/InP structure grown by Plasma assisted molecular beam epitaxy

更新时间：2021-03-12

- A positron annihilation study for InP(InGaAsP)/InP structure grown by Plasma assisted molecular beam epitaxy
- NUCLEAR TECHNIQUES Issue 2, (2001)
- 作者机构：
  
  天津师范大学物理系,天津,300074
- 作者简介：
- 基金信息：
  
  国家自然科学基金!（69886001）
- DOI：
  CLC： O474
- Published：01 February 2001
- 稿件说明：
移动端阅览
[1]白人骥,赵杰.用正电子湮没方法研究氦离子等离子体辅助分子束外延InP( InGaAsP)/InP结构[J].核技术,2001(02):102-106.

BAI Renji ZHAO Jie. A positron annihilation study for InP(InGaAsP)/InP structure grown by Plasma assisted molecular beam epitaxy[J]. Nuclear techniques, 2001, (2): 102-106.
[1]白人骥,赵杰.用正电子湮没方法研究氦离子等离子体辅助分子束外延InP( InGaAsP)/InP结构[J].核技术,2001(02):102-106. DOI：

BAI Renji ZHAO Jie. A positron annihilation study for InP(InGaAsP)/InP structure grown by Plasma assisted molecular beam epitaxy[J]. Nuclear techniques, 2001, (2): 102-106. DOI：

摘要

用氦离子等离子体辅助分子束外延（ＰＡＭＢＥ）方法生长了ＩｎＰ（ＩｎＧａＡｓＰ）／ＩｎＰ结构。研究结果发现，ＰＡＭＢＥ外延层具有很高的电阻率和很快的光反应特性。用慢正电子湮没方法研究了这一外延层，测量结果说明这些特性与等离子体造成的缺陷及缺陷随温度变化有直接关系。

Abstract

A structure of InP(InGaAsP)/InP was grown by He Plasma Assisted Molecular Beam Epitaxy (PAMBE). The epitaxy layer passessed high resistivity and very fast light response. The results of positron annihilation spectrum showed that those electric and optical characteristics were linked with the defects and its evolution created by PAMBE.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

A positron annihilation Study for InP(InGaAsP)/InP structure grown by plasma assisted molecular beam epitaxy

Related Author

白人骥

赵杰

Related Institution

Tianjin Normal University

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880886 Visits Today：413

⁰