Comparison on effects of CMOS devices irradiated by gamma and X ray

HE Chengfa  BA Weizhen  CHEN Zhaoyang

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Comparison on effects of CMOS devices irradiated by gamma and X ray

更新时间：2021-03-12

- Comparison on effects of CMOS devices irradiated by gamma and X ray
- NUCLEAR TECHNIQUES Issue 10, (2001)
- 作者机构：
  
  1. 中国科学院新疆物理研究所
  2. 中国科学院新疆物理研究所,乌鲁木齐,830011
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.5
- Published：01 October 2001
- 稿件说明：
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[1]何承发,巴维真,陈朝阳.CMOS器件X射线与γ射线辐照效应比较[J].核技术,2001(10):807-811.

HE Chengfa BA Weizhen CHEN Zhaoyang. Comparison on effects of CMOS devices irradiated by gamma and X ray[J]. Nuclear techniques, 2001, (10): 807-811.
[1]何承发,巴维真,陈朝阳.CMOS器件X射线与γ射线辐照效应比较[J].核技术,2001(10):807-811. DOI：

HE Chengfa BA Weizhen CHEN Zhaoyang. Comparison on effects of CMOS devices irradiated by gamma and X ray[J]. Nuclear techniques, 2001, (10): 807-811. DOI：

摘要

介绍了低能X射线和γ射线的辐照剂量及器件阈电压漂移的测试方法。讨论了不同偏置条件和辐照方向对器件效应的影响。结果表明

对镀金Kovar合金封装的器件

在背向辐照的最劣辐照偏置下

X射线产生的阈电压漂移是60 Coγ射线的 13.4倍。

Abstract

The methods for measuring the dose induced by low energy X rays and 60 Co γ rays and the threshold voltage shift the devices are described. The influences of the different biases and irradiation directions on the devices are discussed. The results for the devices packaged by gold plating Kovar aolly under a worst case in which the two kinds of rays are incident from the back side are given. The threshold voltage shift for the low energy X rays is 13.4 times larger than that for the 60 Co gamma rays.

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