Key technology of mask making for 50 nm X-ray lithography

DONG Lijun CHEN Dapeng XIE Changqing HAN Jingdong YE Tianchun

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Key technology of mask making for 50 nm X-ray lithography

更新时间：2021-03-12

- Key technology of mask making for 50 nm X-ray lithography
- NUCLEAR TECHNIQUES Issue 2, (2004)
- 作者机构：
  
  1. 中国科学院微电子中心
  2. 中国科学院高能物理研究所同步辐射实验室,北京,100010
  3. ,北京,100039
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305
- Published：01 February 2004
- 稿件说明：
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[1]董立军,陈大鹏,谢常青,韩敬东,叶甜春,伊福廷,彭良强,韩勇,张菊芳.50 nm X射线光刻掩模制备关键技术[J].核技术,2004(02):96-98.

DONG Lijun CHEN Dapeng XIE Changqing HAN Jingdong YE Tianchun. Key technology of mask making for 50 nm X-ray lithography[J]. Nuclear techniques, 2004, (2): 96-98.
[1]董立军,陈大鹏,谢常青,韩敬东,叶甜春,伊福廷,彭良强,韩勇,张菊芳.50 nm X射线光刻掩模制备关键技术[J].核技术,2004(02):96-98. DOI：

DONG Lijun CHEN Dapeng XIE Changqing HAN Jingdong YE Tianchun. Key technology of mask making for 50 nm X-ray lithography[J]. Nuclear techniques, 2004, (2): 96-98. DOI：

摘要

X 射线光刻（XRL）采用约 1nm 波长的 X 射线，是一种接近式光刻。就光刻工艺性能而言，XRL 能同时实现高分辨率、大焦深、大像场等，是其他光刻手段难以比拟的。由于不需要辅助工艺，因而工艺成本很低。掩模制造技术是 XRL 开发中最为困难的部分。本文介绍了适用于 50 nm XRL 的掩模制备的关键技术。

Abstract

The X-ray lithography of 1 nm wavelength is a step lithography. Compared to other next-generation lithography alternatives

the X-ray lithography can improve resolution

depth of focus

and exposure field sizes simultaneously. Another key advantage is the low cost. As the most difficult part of the X-ray lithography

the mask making technology for 50 nm X-ray lithography was discussed in this paper.

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Related Institution

中国科学院高能物理研究所

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School of Nuclear Science and Engineering, East China University of Technology

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