Electronic energy loss effects on chemical modification of polyimide induced by high energy xenon ions

SUN Youmei ZHU Zhiyong JIN Yunfan WANG Zhiguang HOU Mingdong

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Electronic energy loss effects on chemical modification of polyimide induced by high energy xenon ions

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- Electronic energy loss effects on chemical modification of polyimide induced by high energy xenon ions
- NUCLEAR TECHNIQUES Issue 3, (2004)
- 作者机构：
  
  1. 中国科学院近代物理研究所
  2. 中国科学院近代物理研究所,兰州,730000
- 作者简介：
- 基金信息：
  
  中国科学院九五重点项目(KJ952-423);西部之光基金资助
- DOI：
  CLC： O631
- Published：01 March 2004
- 稿件说明：
移动端阅览
[1]孙友梅,朱智勇,金运范,王志光,侯明东.高能~(136)Xe离子辐照聚酰亚胺化学改性的电子能损效应[J].核技术,2004(03):213-216.

SUN Youmei ZHU Zhiyong JIN Yunfan WANG Zhiguang HOU Mingdong. Electronic energy loss effects on chemical modification of polyimide induced by high energy xenon ions[J]. Nuclear techniques, 2004, (3): 213-216.
[1]孙友梅,朱智勇,金运范,王志光,侯明东.高能~(136)Xe离子辐照聚酰亚胺化学改性的电子能损效应[J].核技术,2004(03):213-216. DOI：

SUN Youmei ZHU Zhiyong JIN Yunfan WANG Zhiguang HOU Mingdong. Electronic energy loss effects on chemical modification of polyimide induced by high energy xenon ions[J]. Nuclear techniques, 2004, (3): 213-216. DOI：

摘要

用1.755GeV136Xe离子在真空室温环境下辐照叠层聚酰亚胺薄膜

通过红外和紫外光谱测量研究了高电子能损离子辐照引起的化学降解及炔基产生效应。红外测量结果表明

典型官能团随辐照注量的增加指数降解

且径迹芯中所有官能团均遭到破坏

对应8.8（最小能损

第一层）和11.5keV/nm（最大能损

第五层）电子能损

136Xe辐照聚酰亚胺的平均降解半径分别为3.6和4.1nm。而相应能损条件下炔基的生成截面分别为5.6和5.9nm大于官能团的降解截面。紫外结果表明辐照引起的吸光度的改变随辐照注量线性增加

发色团的产生效率随电子能损的增大而增加。

Abstract

Stacked polyimide (PI) films of about 25 μm in thickness were irradiated with 1.755 GeV xenon ions under vacuum at room temperature. The chemical changes of modified PI films were studied by Fourier transform infrared (FTIR) and ultraviolet/visible (UV/Vis) absorption spectroscopy. The FTIR results show that the absorbance of the typical function groups decreases exponentially as a function of fluence. Under 8.8 keV/nm (minimum) and 11.5 keV/nm (maximum) electronic energy loss of 136Xe irradiation

the mean degradation radius of all function groups in PI is 3.6 and 4.1 nm

respectively. The alkyne end group was found after irradiation and its formation radius was 5.6 nm and 5.9 nm corresponding to 8.8 keV/nm and 11.5 keV/nm

respectively. The UV/Vis analysis indicates the radiation induced absorbance change follows a linear relation with fluence

and the production efficiency of chromospheres depends strongly on the electronic energy loss ( d E / d X ) e.

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Related Institution

School of Applied Science, Harbin University of Science and Technology, Harbin 150080, China) 2

黑龙江科技学院实训中心

工程电介质及其应用技术教育部重点实验室

中国科学院高能物理研究所多学科中心

Institute of Modem Physics, the Chinese Academy of Sciences

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